EPR of Defects in Semiconductors: Past, Present, Future
Watkins G.D.1
1Department of Physics, Lehigh University, Bethlehem, PA, USA
Email: gdw0@lehigh.edu
Выставление онлайн: 19 апреля 1999 г.
Important physiсal concepts learned from early EPR studies of defects in silicon are reviewed. Highlighted are the studies of shallow effective-mass-liked donors and acceptors by Feher, of deep transition element impurities by Ludwig and Woodbury, and of vacancies and interstitials by Watkins et al. It is shown that the concepts learned in silicon translate remarkable well to the corresponding defects in the other elemental and compound semiconductors. The introduction over the intervening years of sensitive optical and electrical detection methods, and the recent progress in single defects detection insure the continued vital role of EPR in the future.
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