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Electrodynamical treatment of the electron-hole long-range exchange interaction in semiconductor nanocrystals
Goupalov S.V.1,2, Lavallard P.3, Lamouche G.4, Citrin D.S.1
1School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia USA
2A.F. Ioffe Physical-Technical Institute, Russian Academy of Sciences, St. Petersburg, Russia
3Groupe de Physique des Solides, CNRS, UMR, Universite Denis Diderot and Universite Pierre et Marie Curie, Paris, Cedex 05, France
4Institut des Materiaux Industriels, CNRC, Boucherville, Quebec, Canada J4B-6Y4
Email: goupalov@ece.gatech.edu
Поступила в редакцию: 12 сентября 2002 г.
Выставление онлайн: 19 марта 2003 г.

We show that the contribution to the fine structure of the ground exciton level in a semiconductor nanocrystal due to the long-range part of the electron-hole exchange interaction can be equivalently described as arising from the mechanical exciton interaction with the exciton-induced macroscopic longitudinal electric field. Particular cases of nanocrystals with cubic and wurtzite crystal lattice in the strong confinement regime are studied taking into account the complex structure of the valence band. A simplified model accounting for the exciton ground-level splitting and exploiting an effective local scalar succeptibility is established.
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