MBE growth of InGaN nanowires on SiC/Si(111) and Si(111) substrates: comparative analysis
Gridchin V. O.1,2, Reznik R. R.2, Kotlyar K. P.1,2, Dragunova A. S.1,3, Kryzhanovskaya N. V.1,3, Serov A. Yu.2, Kukushkin S. A.4, Cirlin G. E.1,2,5
1Alferov Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg, Russia
2St. Petersburg State University, St. Petersburg, Russia
3HSE University, St. Petersburg, Russia
4Institute for Problems in Mechanical Engineering of the Russian Academy of Sciences, St. Petersburg, Russia
5Institute for Analytical Instrumentation of the Russian Academy of Sciences, Saint Petersburg, Russia
Email: gridchinvo@gmail.com
In this work, InGaN nanowires with a high In content were grown, for the first time on hybrid SiC/Si substrates and compared with InGaN nanowires grown on Si. It was shown that InGaN nanowires on SiC/Si have lower indium content (by about 10%) compared to the nanowires on Si. The results can be beneficial for studying the growth mechanisms of InGaN nanowires and creating optoelectronic devices in the visible spectral range. Keywords: InGaN, nanowires, molecular beam epitaxy, SiC/Si, morphological properties, optical properties, miscibility gap, silicon carbide on silicon
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