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Resistive Switching in Individual Ferromagnetic Filaments in ZrO₂(Y)/Ni Based Memristive Stacks

Russian version

DOI: 10.21883/TP.2022.13.52220.105-21

Antonov D. A.¹, Filatov D. O. ¹, Novikov A. S.¹, Kruglov A. V.¹, Antonov I. N. ¹, Zdoroveyschev A. V.², Gorshkov O. N.¹

¹Lobachevsky State University, Nizhny Novgorod, Russia
²Research Institute for Physics and Technology, Lobachevsky State University of Nizhny Novgorod, Nizhny Novgorod, Russia

Email: antonov@phys.unn.ru, dmitry_filatov@inbox.ru, antonov.dmitr@inbox.ru

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Abstract
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The resistive switching effect in individual ferromagnetic filaments in memristive stacks based on ZrO₂(Y)/Ni functional layers was studied experimentally. A conductive probe of an atomic force microscope played a role of a movable top electrode of a virtual memristive stack. The features of bipolar-type resistive switching found were related to the rapture and restoring of the filaments containing Ni atoms in the ZrO₂(Y) dielectric films and are probably caused by different degree of metallization of the filaments. The filaments fromed were manifested in the images obtained by magnetic force microscopy as single-domain ferromagnetic particles. Keywords: memristor, resistive switching, atomic force microscopy, ferromagnetic filaments.

X. Tian, S. Yang, M. Zeng, L. Wang, J. Wei, Z. Xu, W. Wang, X. Bai. Adv. Mater., 26 (22), 3649 (2014). DOI: 10.1002/adma.201400127
I. Valov, R. Waser, J.R. Jameson, M.N. Kozicki. Nanotechnology, 22, 254003 (2011). DOI: 10.1088/0957-4484/22/28/289502
J.J. Yang, D.B. Strukov, D.R. Stewart. Nat. Nanotechnol., 8, 13 (2013). DOI: 10.1038/nnano.2012.240
H.-J. Jang, O.A. Kirillov, O.D. Jurchescu, C.A. Richter. Appl. Phys. Lett., 100 (4), 43510 (2012). DOI: 10.1063/1.3679114
F.Z. Wang, L. Li, L. Shi, H. Wu, L.O. Chua. J. Appl. Phys., 125 (5), 54504 (2019). DOI: 10.1063/1.5042281
L. Li, Y. Liu, J. Teng, S. Long, Q. Guo, M. Zhang, Y. Wu, G. Yu, Q. Liu, H. Lv, M. Liu. Nanoscale Res. Lett., 12, 210 (2017). DOI: 10.1186/s11671-017-1983-2
S. Otsuka, Y. Hamada, D. Ito, T. Shimizu, S. Shingubara. Jpn. J. Appl. Phys., 54 (5S), 05ED02 (2015). DOI: 10.7567/JJAP.54.05ED02
Z. Yang, Q. Zhan, X. Zhu, Y. Liu, H. Yang, B. Hu, J. Shang, L. Pan, B. Chen, R.-W. Li. Europhys. Lett., 108 (5), 58004 (2014). DOI: 10.1209/0295-5075/108/58004
S. Otsuka, Y. Hamada, T. Shimizu, S. Shingubara. Appl. Phys. A Mater. Sci. Process, 118, 613 (2015). DOI: 10.1007/s00339-014-8769-5
M. Lubben, I. Valov. Adv. Electron. Mater., 5 (9), 1800933 (2019). DOI: 10.1002/aelm.201800933
S. Ambrogio, B. Magyari-Kope, N. Onofrio, M.M. Islam, D. Duncan, Y. Nishi, A. Strachan. J. Electroceram., 39, 39 (2017). DOI: 10.1007/s10832-017-0093-y
M. Lanza, Conductive Atomic Force Microscopy: Applications in Nanomaterials (Weinheim: Wiley-VCH Verlag GmbH \& Co. KGaA, 2017)
D.O. Filatov, D.A. Antonov, I.N. Antonov, A.P. Kasatkin, O.N. Gorshkov. J. Mater. Sci. Chem. Eng., 5, 8 (2017). DOI: 10.4236/msce.2017.51002
R. Waser, J. Nanosci. Nanotechnol., 12, 7628 (2012). DOI: 10.1166/jnn.2012.6652
D.V. Ovchinnikov, A.A. Bukharaev. In: AIP Conf. Proceed., 696, 634 (2003). DOI: 10.1063/1.1639762

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