Technical Physics
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Resistive Switching in Individual Ferromagnetic Filaments in ZrO2(Y)/Ni Based Memristive Stacks
Antonov D. A.1, Filatov D. O. 1, Novikov A. S.1, Kruglov A. V.1, Antonov I. N. 1, Zdoroveyschev A. V.2, Gorshkov O. N.1
1Lobachevsky State University, Nizhny Novgorod, Russia
2Research Institute for Physics and Technology, Lobachevsky State University of Nizhny Novgorod, Nizhny Novgorod, Russia
2Research Institute for Physics and Technology, Lobachevsky State University of Nizhny Novgorod, Nizhny Novgorod, Russia
Email: antonov@phys.unn.ru, dmitry_filatov@inbox.ru, antonov.dmitr@inbox.ru
The resistive switching effect in individual ferromagnetic filaments in memristive stacks based on ZrO2(Y)/Ni functional layers was studied experimentally. A conductive probe of an atomic force microscope played a role of a movable top electrode of a virtual memristive stack. The features of bipolar-type resistive switching found were related to the rapture and restoring of the filaments containing Ni atoms in the ZrO2(Y) dielectric films and are probably caused by different degree of metallization of the filaments. The filaments fromed were manifested in the images obtained by magnetic force microscopy as single-domain ferromagnetic particles. Keywords: memristor, resistive switching, atomic force microscopy, ferromagnetic filaments.
- X. Tian, S. Yang, M. Zeng, L. Wang, J. Wei, Z. Xu, W. Wang, X. Bai. Adv. Mater., 26 (22), 3649 (2014). DOI: 10.1002/adma.201400127
- I. Valov, R. Waser, J.R. Jameson, M.N. Kozicki. Nanotechnology, 22, 254003 (2011). DOI: 10.1088/0957-4484/22/28/289502
- J.J. Yang, D.B. Strukov, D.R. Stewart. Nat. Nanotechnol., 8, 13 (2013). DOI: 10.1038/nnano.2012.240
- H.-J. Jang, O.A. Kirillov, O.D. Jurchescu, C.A. Richter. Appl. Phys. Lett., 100 (4), 43510 (2012). DOI: 10.1063/1.3679114
- F.Z. Wang, L. Li, L. Shi, H. Wu, L.O. Chua. J. Appl. Phys., 125 (5), 54504 (2019). DOI: 10.1063/1.5042281
- L. Li, Y. Liu, J. Teng, S. Long, Q. Guo, M. Zhang, Y. Wu, G. Yu, Q. Liu, H. Lv, M. Liu. Nanoscale Res. Lett., 12, 210 (2017). DOI: 10.1186/s11671-017-1983-2
- S. Otsuka, Y. Hamada, D. Ito, T. Shimizu, S. Shingubara. Jpn. J. Appl. Phys., 54 (5S), 05ED02 (2015). DOI: 10.7567/JJAP.54.05ED02
- Z. Yang, Q. Zhan, X. Zhu, Y. Liu, H. Yang, B. Hu, J. Shang, L. Pan, B. Chen, R.-W. Li. Europhys. Lett., 108 (5), 58004 (2014). DOI: 10.1209/0295-5075/108/58004
- S. Otsuka, Y. Hamada, T. Shimizu, S. Shingubara. Appl. Phys. A Mater. Sci. Process, 118, 613 (2015). DOI: 10.1007/s00339-014-8769-5
- M. Lubben, I. Valov. Adv. Electron. Mater., 5 (9), 1800933 (2019). DOI: 10.1002/aelm.201800933
- S. Ambrogio, B. Magyari-Kope, N. Onofrio, M.M. Islam, D. Duncan, Y. Nishi, A. Strachan. J. Electroceram., 39, 39 (2017). DOI: 10.1007/s10832-017-0093-y
- M. Lanza, Conductive Atomic Force Microscopy: Applications in Nanomaterials (Weinheim: Wiley-VCH Verlag GmbH \& Co. KGaA, 2017)
- D.O. Filatov, D.A. Antonov, I.N. Antonov, A.P. Kasatkin, O.N. Gorshkov. J. Mater. Sci. Chem. Eng., 5, 8 (2017). DOI: 10.4236/msce.2017.51002
- R. Waser, J. Nanosci. Nanotechnol., 12, 7628 (2012). DOI: 10.1166/jnn.2012.6652
- D.V. Ovchinnikov, A.A. Bukharaev. In: AIP Conf. Proceed., 696, 634 (2003). DOI: 10.1063/1.1639762
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