Technical Physics Letters
To authors
Volumes and Issues
- 2024
- 2023
- 2022
Nonlocal electron dynamics in GaN / AlGaN transistor heterostructures
The processes of nonlocal electron heating in transistor heterostructures based on gallium nitride and gallium arsenide were compared. It has been shown that, in the case of GaAs double doped pseudomorphic heterostructures, the real space transfer of electrons significantly reduces their drift velocity overshot in the region of a strong field as compared with pure bulk GaAs, while in GaN-based heterostructures the decrease in the drift velocity overshot does not exceed 30% in the studied cases. Keywords: Real space transfer, field-effect transistor, gain factor
- V. Camarchia, R. Quaglia, A. Piacibello, D.P. Nguyen, H. Wang, A.-V. Pham, IEEE Trans. Microw. Theory Techn., 68 (7), 2957 (2020). DOI: 10.1109/TMTT.2020.2989792
- M. Micovic, A. Kurdoghlian, A. Margomenos, D.F. Brown, K. Shinohara, S. Burnham, I. Milosavljevic, R. Bowen, A.J. Williams, P. Hashimoto, R. Grabar, C. Butler, A. Schmitz, P.J. Willadsen, D.H. Chow, in 2012 IEEE/MMT-S Int. Microwave Symp. Digest (IEEE, 2012), p. 1. DOI: 10.1109/MWSYM.2012.6259572
- Y. Tang, K. Shinohara, D. Regan, A. Corrion, D. Brown, J. Wong, A. Schmitz, H. Fung, S. Kim, M. Micovic, IEEE Electron Dev. Lett., 36 (6), 549 (2015). DOI: 10.1109/LED.2015.2421311
- S. Rahman, N.A. Farhana Othman, S.W. Muhamad Hatta, N. Soin, ECS J. Solid State Sci. Technol., 6 (12), 805 (2017). DOI: 10.1149/2.0131712jss
- S. Bajaj, Z. Yang, F. Akyol, P.S. Park, Y. Zhang, A.L. Price, S. Krishnamoorthy, D.J. Meyer, S. Rajan, IEEE Trans. Electron Dev., 64 (8), 3114 (2017). DOI: 10.1109/TED.2017.2713784
- M.G. Ancona, J.P. Calame, D.J. Meyer, S. Rajan, B.P. Downey, IEEE Trans. Electron Dev., 66 (5), 2151 (2019). DOI: 10.1109/TED.2019.2904005
- T.R. Lenka, A.K. Panda, Semiconductors, 45 (5), 650 (2011). DOI: 10.1134/S1063782611050198
- B.E. Foutz, S.K. O'Leary, M.S. Shur, L.F. Eastman, J. Appl. Phys., 85 (11), 7727 (1999). DOI: 10.1063/1.370577
- A.B. Pashkovskii, V.M. Lukashin, Ya.B. Martynov, V.G. Lapin, A.A. Kapralova, I.A. Anisimov, Elektronnaya tekhnika. Ser. 1. SVCh-tekhnika, V. 4, 5 (2014) (in Russian)
- A.B. Pashkovskii, S.I. Novikov, V.G. Lapin, V.M. Lukashin, Ya.B. Martynov, Tech. Phys. Lett., 44 (9), 804 (2018). DOI: 10.1134/S1063785018090092
- M. Shur, Electron. Lett., 12 (23), 615 (1976)
- R. Sakamoto, K. Akai, M. Inoue, IEEE Trans. Electron Dev., 36 (10), 2344 (1989)
- A.A. Kal'fa, A.B. Pashkovskii, FTP, 24 (3), 521 (1990) (in Russian)
- N.Z. Vagidov, Z.S. Gribnikov, V.M. Ivashchenko, FTP, 23 (2), 304 (1989) (in Russian)
- N.Z. Vagidov, Z.S. Gribnikov, V.M. Ivashchenko, FTP, 24 (6), 1087 (1990) (in Russian)
- V.B. Gornfinkel', S.G. Shofman, FTP, 22 (5), 793 (1988) (in Russian)
- A.B. Pashkovskii, S.A. Bogdanov, Tech. Phys. Lett., 45 (10), 1020 (2019). DOI: 10.1134/S1063785019100286
- D.Yu. Protasov, K.S. Zhuravlev, Solid-State Electron., 29, 66 (2017). DOI: 10.1016/j.sse.2016.12.013
Подсчитывается количество просмотров абстрактов ("html" на диаграммах) и полных версий статей ("pdf"). Просмотры с одинаковых IP-адресов засчитываются, если происходят с интервалом не менее 2-х часов.
Дата начала обработки статистических данных - 27 января 2016 г.