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Effect of the presence of a sufficiently high phosphorus concentration on the concentration distribution of gallium in silicon
It was found that the silicon preliminarily doped with a high concentration of phosphorus during the diffusion of gallium, there is a significant increase in the solubility of the gallium. The results obtained are explained by the interaction of gallium and phosphorus atoms, as a result of which quasi-neutral molecules [P+Ga-] are formed. It is assumed that the formation of such quasineutral molecules [P+Ga-] stimulates the formation of Si2GaP binary unit cells in the silicon lattice. It is shown that a sufficiently high concentration of such unit cells can lead to a significant change in the electrophysical parameters of silicon, i.e. the possibility of obtaining a new material based on silicon. Keywords: silicon, gallium, phosphorus, binary cell, diffusion.
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