Study of heavily doped n-3C-SiC epitaxial films grown on 6H-SiC semi-insulating substraes by sublimation method
Lebedev A.A. 1, Davydov V.Yu. 1, Eliseev I.A. 1, Lebedev S.P.1, Nikitina I.P.1, Oganesyan G.A. 1, Smirnov A.N. 1, Shakhov L.V1
1Ioffe Institute, St. Petersburg, Russia
Email: shura.lebe@mail.ioffe.ru

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Heavily doped 3C-SiC films based on semi-insulating 6H-SiC substrates were obtained by sublimation epitaxy. The structural perfection of the obtained samples was monitored by X-ray diffractometry. The measurements of the photoluminescence and Hall effect spectra have confirmed the rather high perfection of the obtained epitaxial layers. Keywords: SiC, heteroepitaxy, cubic silicon carbide, X-ray diffractometry, Hall effect, photoluminescence.
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