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Optical properties of silicon nanopillars with a built-in vertical p-n-junction
Russian version
DOI: 10.21883/SC.2022.03.53067.9761
Basalaeva L. S. 1, Tsarev A. V. 1,2, Anikin K. V. 1, Veber S. L. 2,3, Kryzhanovskaya N. V. 4, Nastaushev Yu. V. 1
1Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia
2Novosibirsk State University, Novosibirsk, Russia
3International Tomography Center, Siberian Branch of Russian Academy of Sciences, Novosibirsk, Russia
4Alferov Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg, Russia
Email: basalaeva@isp.nsc.ru, tsarev@isp.nsc.ru, kirill_anikin@list.ru, sergey.veber@tomo.nsc.ru, kryj@mail.ioffe.ru, nast@isp.nsc.ru
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Resonance reflection of light from the ordered arrays of silicon nanopillars (Si NP) was investigated. The height of Si NP was 450 nm. The effect of Si NP oxidation in concentrated nitric acid on the position of resonances in reflection spectra was studied. A weak influence of the additional polymeric coating on the characteristics of reflection from the structures was proven. It is established on the basis of the results of experimental investigation and direct numerical modeling by means of three-dimensional finite difference time domain algorithm (3D FDTD) that the dependence of the resonant wavelength for Si NP on the diameter of Si NP is a linear function with nonzero displacement depending on the pitch. Keywords: silicon nanopillars, structural colors, all-dielectric nanophotonics.
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