The increasing of charge carriers concentration in thin bismuth films
Demidov E. V. 1, Grabov V. M. 1, Komarov V. A. 1, Suslov A. V. 1, Gerega V. A. 1, A. N. Krushelnitckii 1
1Herzen State Pedagogical University of Russia, St. Petersburg, Russia
Email: demidov_evg@mail.ru, vmgrabov@yandex.ru, va-komar@yandex.ru, a.v_suslov@mail.ru, gerega.vasilisa96@gmail.com, ak.spb.ru@gmail.com

PDF
The reasons for increasing the charge carriers concentration in thin bismuth films are discussed. The concentration was calculated on the basis of the measured electrical and galvanomagnetic coefficients at the temperature 77 K under the two-band approximation and the assumption that the charge carriers free path in the plane of the film is isotropic. Keywords: Bismuth, thin film, charge carriers concentration, surface.
  1. V.N. Lutsky. Pis'ma ZhETF, 2, 391 (1995) (in Russian)
  2. V.B. Sandomirsky. ZhETF, 52, 158 (1967) (in Russian)
  3. Y.-M. Lin, X. Sun, M.S. Dresselhaus. Phys. Rev. B, 62, 4610 (2000)
  4. P. Hofmann. Progr. Surf. Sci., 81, 191 (2006)
  5. V.P. Duggal, R. Rup. J. Appl. Phys., 40, 492 (1969)
  6. C.A. Hoffman, J.R. Meyer, F.J. Bartoli, A. Di Venere, X.J. Yi, C.L. Hou, H.C. Wang, J.B. Ketterson, G.K. Wong. Phys. Rev. B, 48, 11431 (1993)
  7. E.V. Demidov, V.M. Grabov, V.A. Komarov, N.S. Kablukova, A.N. Krushelnitsky. FTT, 60, 452 (2018) (in Russian)
  8. Yu.F. Komnik, E.I. Bukhshtab, Yu.V. Nikitin, V.V. Andrievsky. ZhETF, 60, 669 (1971) (in Russian)
  9. V.M. Grabov, V.A. Komarov, N.S. Kablukova, E.V. Demidov, A.N. Krushelnitsky. Pis'ma ZhTF, 41, 20 (2015) (in Russian)
  10. E.V. Demidov, V.A. Komarov, A.N. Krushelnitckii, A.V. Suslov. FTP, 51, 877 (2017) (in Russian)
  11. V.M. Grabov, E.V. Demidov, V.A. Komarov. FTT, 50, 1312 (2008) (in Russian)
  12. V.M. Grabov, E.V. Demidov, V.A. Komarov, M.M. Klimantov. FTT, 51, 800 (2009) (in Russian)
  13. V.M. Grabov, E.V. Demidov, V.A. Komarov, M.M. Klimantov, D.Yu. Matveev, S.V. Slepnev, E.V. Usynin, E.E. Khristich, E.V. Konstantinov. Izv. Ross. gos. ped. un-ta im. A.I. Gertsen, N 95, 105 (2009) (in Russian)
  14. V.M. Grabov, E.V. Demidov, V.A. Komarov. Poverkhnost'. Rentgenovskie, sinhrotronnye i nejtronnye issledovaniya N 2, 81 (2011) (in Russian)
  15. V.M. Grabov, E.V. Demidov, V.A. Komarov. FTT, 52, 1219 (2010) (in Russian)
  16. J. Zajman. Electrony i phonony (M., IIL, 1962)
  17. F.D. Blatt. Teoriya podvizhnisti electronov v tverdykh telakh (M., Fizmatlit, 1963) (in Russian)
  18. V.M. Grabov. Dokt. dis. (SPb. RGPU im. A.I. Gertsena, 1998) (in Russian)
  19. T. Hirahara, T. Nagao, I. Matsuda, G. Bihlmayer, E.V. Chulkov, Y.M. Koroteev, P.M. Echenique, M. Saito, S. Hasegawa. Phys. Rev. Lett., 97, 146803 (2006)
  20. T. Hirahara, I. Matsuda, S. Yamazaki, N. Miyata, S. Hasegawa, T. Nagao. Appl. Phys. Lett., 91, 202106 (2007)
  21. V.M. Grabov, V.A. Komarov, N.S. Kablukova. FTT, 58, 605 (2016) (in Russian)
  22. E.V. Demidov, V.M. Grabov, V.A. Komarov, A.N. Krushelnitckii, A.V. Suslov, M.V. Suslov. FTP, 53, 736 (2019) (in Russian)
  23. Yu.F. Komnik. Fizika metallicheskikh plenok (M., Atomizdat, 1979) (in Russian)

Подсчитывается количество просмотров абстрактов ("html" на диаграммах) и полных версий статей ("pdf"). Просмотры с одинаковых IP-адресов засчитываются, если происходят с интервалом не менее 2-х часов.

Дата начала обработки статистических данных - 27 января 2016 г.

Publisher:

Ioffe Institute

Institute Officers:

Director: Sergei V. Ivanov

Contact us:

26 Polytekhnicheskaya, Saint Petersburg 194021, Russian Federation
Fax: +7 (812) 297 1017
Phone: +7 (812) 297 2245
E-mail: post@mail.ioffe.ru