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Structure and properties of two-phase CdxPb1-xS/CdS films obtained by chemical deposition from the ethylenediamine-citrate system
Russian version
DOI: 10.21883/SC.2022.04.53234.9783
Selyanina A. D. 1, Maskaeva L. N. 1,2, Voronin V. I. 3, Selyanin I. O.4, Anokhina I.А.5, Markov V.F.1,2
1Ural Federal University after the first President of Russia B.N. Yeltsin, Yekaterinburg, Russia
2Ural Institute of State Fire Service of EMERCOM of Russia, Yekaterinburg, Russia
3M.N. Mikheev Institute of Metal Physics, Ural Branch, Russian Academy of Sciences, Yekaterinburg, Russia
4Institute of Solid State Chemistry, Russian Academy of Sciences, Ural Branch, Yekaterinburg, Russia
5Institute of High-Temperature Electrochemistry, Ural Branch, Russian Academy of Sciences, Yekaterinburg, Russia
Email: n-kutyavina@mail.ru
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Polycrystalline films of CdxPb1-xS (0≤ x≤0.05) substitutional solid solutions with a cubic structure B1 (Fm3m space group) containing amorphous cadmium sulfide were obtained by chemical bath deposition. Upon reaching a critical concentration of the cadmium salt in the reactor, the films consisted of substitutional solid solution and cubic CdS with the B3 structure (F43m space group). Scanning electron microscopy established the morphological features associated with the secondary nucleation and formation of the cadmium sulfide phase. The structural characteristics of the films have been calculated by a full-profile analysis of X-ray diffraction patterns. We have revealed the correlation between phase and elemental composition of CdxPb1-xS/CdS films with their voltage and current photosensitivity. Based on the received data, we have assumed the role of the individual CdS phase for the photoconductivity mechanism of CdxPb1-xS solid solutions. Keywords: chemical bath deposition, thin films, solid solutions, cadmium sulfide, photosensitivity, current-voltage characteristics.
  1. L.N. Maskaeva, V.F. Markov, M.Yu. Porhachev, O.A. Mokrousova. Pozharovzryvobezopasnost, 24 (9), 67 (2015)
  2. E. Pentia, V. Draghici, G. Sarau, B. Mereu, L. Pintilie, F. Sava, M. Popescu. J. Electrochem. Soc., 151 (11), G729 (2004)
  3. A. Ounissi, N. Ouddai, S. Achour.EPJ. Appl. Phys., 37 (3), 241 (2007)
  4. B. Touati, A. Gassoumi, C. Guasch, N.K. Turki. Mater. Sci. Semicond. Proc., 67, 20 (2017)
  5. G.H.T. Au, W.Y. Shih, S.-J. Tseng, W.-H. Shih. Nanotech., 23, 275601 (2012)
  6. G.-L. Tan, L. Liu, W. Wgu. AIP Advances, 4 (6), 067107 (2014).
  7. P.L. Nichols, Z. Liu, L. Yin, S. Turkdogan, F. Fan, C.Z. Ning. Nano Lett., 15 (2), 909 (2015)
  8. E.M. Nasir, I.S. Naji. Aust. J. Basic \& Appl. Sci., 9 (20), 364 (2015)
  9. C. Rajashree, A.R. Balu, V.S. Nagarethinam. Surf. Eng., 31 (4), 316 (2015)
  10. M. Kamruzzaman, R. Dutta, J. Podder. Semiconductors, 46 (7), 957 (2012)
  11. A.R. Patil. JETIR, 6 (3), 570 (2019)
  12. L.N. Maskaeva, E.V. Mostovshchikova, I.V. Vaganova, V.F. Markov, V.I. Voronin, A.D. Kutyavina, I.N. Miroshnikova, E.G. Vovkotrub. Thin Sol. Films, 718, 138468 (2021)
  13. E. Rabinovich, E. Wachtel, G. Hodes. Thin Sol. Films, 517 (2), 737 (2008)
  14. M. Barote, A. Yadav, E. Masumdar. Chalcogenide Lett., 8 (2), 129 (2011)
  15. L.N. Maskaeva, A.D. Kutyavina, V.F. Markov, I.V. Vaganova, V.I. Voronin. ZhOKh, 88 (2), 319 (2018) (in Russian)
  16. M.A. Barote, S.S. Kamble, L.P. Deshmukh, E.U. Masumdar. Ceram. Int., 39, 1463 (2013)
  17. V.F. Markov, L.N. Maskaeva, P.N. Ivanov. Gidrohimicheskoe osazhdenie plenok sul'fidov metallov: modelirovanie, eksperiment (Ekaterinburg, UrO RAN, 2006) (in Russian)
  18. V. Rakovics. MRS Proceedings, 900E, (2005)
  19. K.E. Suryavanshi, R.B. Dhake, A.M. Patil, M.R. Sonawane. Optik, 218, 165008 (2020)
  20. N.A. Forostyanaya, L.N. Maskaeva, A.D. Kutyavina, M.A. Ponomareva, A.A. Rozhina, P.O. Mihnevich, V.F. Markov. Butlerovskie soobshcheniya, 46 (5), 80 (2016) (in Russian)
  21. H.M. Rietveld. J. Appl. Crystallogr., 2 (2), 65 (1969)
  22. D.L. Bush, J.E. Post. Rev. Miner., 20,369 (1990)
  23. J. Rodrigues-Carvajal. Physica B, 192 (1-2), 55 (1993)
  24. L.T. Bugaenko, S.M. Ryabyh, A.L. Bugaenko. Vestn. MGU. Ser. 2. Khimiya, 49 (6), 363 (2008) (in Russian)
  25. M. Lach-hab, D.A. Papaconstantopoulos, M.J. Mehl. J. Phys. Chem. Solids, 63, 833 (2002)
  26. A.D. Kutyavina, L.N. Maskaeva, V.I. Voronin, I.A. Anokhina, V.F. Markov. CTA, 8 (2), 20218210 (2021)
  27. J.A. Corll. J. Appl. Phys., 35 (10), 3032 (1964)
  28. K. Susa, T. Kobayashi, S. Taniguchi. Solid State Chem., 33, 197 (1980)
  29. A.V. CHichagov, L.V. Sipavina. Parametry yacheek tverdyh rastvorov (M., Nauka, 1982) (in Russian)
  30. L. Vegard. Zeitschrift Phys., 5, 17 (1921)
  31. A.R. Denton, N.W. Ashcroft. Phys. Rev. A, 43, 3161 (1991)
  32. R. Lozada-Morales, O. Zelaya-Angel. Cryst. Res. Technol., 39 (12), 1115 (2004)
  33. L.E. Shelimova, V.N. Tomashik V.I. Gricyv. Diagrammy sostoyaniya v poluprovodnikovom materialovedenii ( sistemy na osnove hal'kogenidov Si, Ge, Sn, Pb) (M., Nauka, 1991) (in Russian)
  34. A.S. Kurlov, A.I. Gusev. Fizika i khimiya stekla, 33 (3), 383 (2007) (in Russian)
  35. L.N. Maskaeva, I.V. Vaganova, V.F. Markov, A.E. Bezdetnova, A.D. Selyanina, V.I. Voronin, I.O. Selyanin. FTP, 55 (12), 1186 (2021) (in Russian)
  36. H.M. Sulajmonov, H.T. Juldashev, O.R. Nurmatov, T.I. Rahmonov, H.E. Muhammadyakubov. Izv. Oshckogo tekhnologicheskogo un-ta, 3, 180 (2019) (in Russian)
  37. L.N. Neustroev, V.V. Osipov. FTP, 20 (1), 59 (1986) (in Russian)
  38. R.Y. Petrus, H.A. Ilchuk, A.I. Kashuba, I.V. Semkiv, E.O. Zmiiovska. JAS, 126 (3), 220 (2019).

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