Circularly polarized electroluminescence at room temperature in heterostructures based on GaAs:Fe diluted magnetic semiconductor
Ved M. V.1, Dorokhin M. V. 1, Lesnikov V. P.1, Kudrin A. V. 1, Demina P. B.1, Zdoroveyshchev A. V.1, Danilov Yu. A. 1
1Research Institute for Physics and Technology, Lobachevsky State University of Nizhny Novgorod, Nizhny Novgorod, Russia
Email: mikhail28ved@gmail.com, dorokhin@nifti.unn.ru, lesnikov@nifti.unn.ru, kudrin@nifti.unn.ru, Demina@phys.unn.ru, zdorovei@nifti.unn.ru, danilov@nifti.unn.ru

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In this work, we demonstrate the possibility of using a diluted magnetic semiconductor GaAs:Fe as a ferromagnetic injector in a spin light-emitting diode based on a GaAs/InGaAs quantum well heterostructure. It is shown that in such a device it is possible to observe partially circularly polarized electroluminescence at room temperature. Keywords: spin light-emitting diodes, diluted magnetic semiconductors, A3B5 semiconductors, spin injection.
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