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Influence of low temperature on the electrophysical and noise characteristics of UV LEDs based on InGaN/GaN quantum well structures
Ivanov A. M.
1, Klochkov A. V.1
1Ioffe Institute, St. Petersburg, Russia
Email: alexandr.ivanov@mail.ioffe.ru
Comparison of optical power, external quantum efficiency in InGaN/GaN UV LEDs at room temperature and liquid nitrogen temperature is carried out. The spectral densities of the current low-frequency noise have been investigated. The mechanisms of carrier transport, the formation of low-frequency noise, and the dependences of the rates of radiative and nonradiative recombination at room and nitrogen temperatures are considered. Keywords: External quantum efficiency, low-frequency noise, carrier transport, defect tunneling.
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