Technical Physics Letters
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- 2023
- 2022
Study of nitrogen ion implantation through Si3N4 layer for GaN on Si power HEMTs isolation process
Egorkin V. I.
1, Obolenskiy S. V.
2, Zemlyakov V. E.
1, Zaytsev A. A.
1, Garmash V. I.1
1National Research University of Electronic Technology, Zelenograd, Moscow, Russia
2Lobachevsky State University, Nizhny Novgorod, Russia
2Lobachevsky State University, Nizhny Novgorod, Russia
Email: egorkinvi1962@mail.ru, obolensk@rf.unn.ru, vzml@rambler.ru, Ziko27@yandex.ru, garmashvalentine@gmail.com
This letter reports a nitrogen ion implantation through silicon nitride passivation layer deposited on AlGaN/GaN on Si heterojunction structure. Employment of Si3N4 layer simplify HEMT fabrication process and helps to obtain high resistivity isolation due to the shift of implanted ions distribution towards the surface of semiconductor. This isolation process in combination with C-doped heterostructure buffer layer results in increased up to 650 V breakdown voltage. Keywords: ion implantation, breakdown voltage, GaN, power transistor.
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