Physics of the Solid State
Volumes and Issues
Home » Physics of the Solid State » Year 2022, issue 11 » Article p. 1657
<<<>>>
Interface doping of zinc oxide nanorods
Russian version
DOI: 10.21883/PSS.2022.11.54187.408
Ryabko A. A. 1, Mazing D.S. 2, Bobkov A. A. 2, Maximov A. I. 2, Levitskii V. S. 1, Lazneva E. F. 3, Komolov A. S. 3, Moshnikov V. A. 2, Terukov E. I. 1
1Ioffe Institute, St. Petersburg, Russia
2St. Petersburg State Electrotechnical University “LETI", St. Petersburg, Russia
3St. Petersburg State University, St. Petersburg, Russia
Email: a.a.ryabko93@yandex.ru, dmazing@yandex.ru, darklord125@mail.ru, aimaximov@mail.ru, lev-vladimir@yandex.ru, akomolov07@yandex.ru, vamoshnikov@mail.ru
PDF
The effect of an increase in the electrical conductivity of a system of zinc oxide nanorods by a factor of 105 during atomic layer deposition of a thin dielectric layer of aluminum oxide was found. It is shown that a change in the electrical conductivity of zinc oxide during atomic layer deposition of aluminum oxide on the surface is also observed for thin polycrystalline layers of zinc oxide. A study of polycrystalline layers of zinc oxide coated with aluminum oxide using ultraviolet and X-ray photoelectron spectroscopy is presented. Based on the results of photoelectron spectroscopy, two main factors for changing the electrical conductivity are proposed, which consist in the formation of a two-dimensional electron gas at the ZnO|Al2O3 interface and doping of the near-surface region of zinc oxide with aluminum atoms. Keywords: nanorods, zinc oxide, aluminum oxide, atomic layer deposition, transparent electrodes, X-ray photoelectron spectroscopy, ultraviolet photoelectron spectroscopy.
  1. U. Ozgur, Y.I. Alivov, C. Liu, A. Teke, M.A. Reshchikov, S. Dogan, V. Avrutin, S.J. Cho, H.A. Morkoc. J.Appl. Phys. 98, 4, 041301 (2005)
  2. P.R. Brown, R.R. Lunt, N. Zhao, T.P. Osedach, D.D. Wanger, L.-Y. Chang, M.G. Bawendi, V. Bulovic. Nano Lett. 11, 7, 2955 (2011)
  3. A. Takahashi, H. Wang, T. Fukuda, N. Kamata, T. Kubo, H. Segawa. Energies 13, 19, 5037 (2020)
  4. D.S.Ahmed, B.K.Mohammed, M.K.A.Mohammed. J. Mater Sci 56, 27, 15205 (2021)
  5. L.-M. Wang, C.-Y. Wang, C.-R. Jheng, S.-J. Wu, C.-K. Sai, Y.-J. Lee, C.-Y. Chiang, B.-Y. Shew. Appl. Phys. A 122, 8, 731 (2016)
  6. L.M. Wong, S.Y. Chiam, W.K. Chim, J.S. Pan, S.J. Wang. Thin Solid Films 545, 285 (2013)
  7. D.C. Look, K.D. Leedy, L. Vines, B.G. Svensson, A. Zubiaga, F. Tuomisto, D.R. Doutt, L.J. Brillson. Phys. Rev. B 84, 11, 115202 (2011)
  8. Y. Wu, P.M. Hermkens, B.W.H. van de Loo, H.C.M. Knoops, S.E. Potts, M.A. Verheijen, F. Roozeboom, W.M.M. Kessels. J.Appl. Phys. 114, 2, 024308 (2013)
  9. Y.-J. Lu, H.-F. Li, C.-X. Shan, B.-H. Li, D.-Z. Shen, L.-G. Zhang, S.-F. Yu. Opt. Express 22, 14, 7524 (2014)
  10. A. Rasool, M.C.S. Kumar, M.H. Mamat, C. Gopalakrishnan, R. Amiruddin. J. Mater. Sci.: Mater. Electron. 31, 9, 7100 (2020)
  11. M. Ding, D. Zhao, B. Yao, S.E.Z. Guo, L. Zhang, D. Shen. Opt. Express 20, 13, 13657 (2012)
  12. M. Willander, M.Q. Israr, J.R. Sadaf, O. Nur. Nanophotonics 1, 1, 99 (2012)
  13. V. Consonni, J. Briscoe, E. Karber, X. Li, T. Cossuet. Nanotechnol. 30, 36, 362001 (2019)
  14. J. Al-Sabahi, T. Bora, M. Al-Abri, J. Dutta. Materials 9, 4, 238 (2016)
  15. S. Xu, Y. Qin, C. Xu, Y. Wei, R. Yang, Z.L. Wang. Nature Nanotechnol. 5, 5, 366 (2010)
  16. L.K. Krasteva, D.Ts. Dimitrov, K.I. Papazova, N.K. Nikolaev, T.V. Peshkova, V.A. Moshnikov, I.E. Grachyova, S.S. Karpova, N.V. Kaneva. FTP 47, 4, 564 (2013) (in Russian)
  17. A. Bobkov, A. Varezhnikov, I. Plugin, F.S. Fedorov, V. Trouillet, U. Geckle, M. Sommer, V. Goffman, V. Moshnikov, V. Sysoev. Sensors 19, 19, 4265 (2019)
  18. A.A. Ryabko, A.A. Bobkov, S.S. Nalimova, A.I. Maksimov, V.S. Levitsky, V.A. Moshnikov, E.I. Terukov. ZhTF 92, 5, 758 (2022) (in Russian)
  19. A.A. Ryabko, S.S. Nalimova, D.S. Mazing, O.A. Korepanov, A.M. Guketlov, O.A. Aleksandrova, A.I. Maksimov, V.A. Moshnikov, Z.V. Shomakhov, A.N. Alyoshin. ZhTF 92, 6, 845 (2022) (in Russian)
  20. A.B. Nikol'skaya, S.S. Kozlov, M.F. Vil'danova, O.I. Shevaleevsky. FTP 53, 4, 550 (2019) (in Russian)
  21. S. Zang, Y. Wang, W. Su, H. Zhu, G. Li, X. Zhang, Y. Liu. Phys. Status Solidi RRL 10, 10, 745 (2016)
  22. S. Ozu, Y. Zhang, H. Yasuda, Y. Kitabatake, T. Toyoda, M. Hirata, K. Yoshino, K. Katayama, S. Hayase, R. Wang, Q. Shen. Frontiers. Energy Res. 7, 11 (2019)
  23. B. Wei, Z. Tang, S. Wang, C. Qing, C. Li, X. Ding, Y. Gao, X. Portier, F. Gourbilleau, D. Stievenard, T. Xu. Nanotechnol. 29, 39, 395204 (2018)
  24. S. Zang, Y. Wang, M. Li, W. Su, M. An, X. Zhang, Y. Liu. Chin. Phys. B 2, 1, 018503 (2018)
  25. K.R. Nandanapalli, D. Mudusu. ACS Appl. Nano Mater. 1, 8, 4083 (2018)
  26. K. Gawlinska-Necek, M. Wlazlo, R. Socha, I. Stefaniuk, L. Major, P. Panek. Materials 14, 4, 1038 (2021)
  27. H.-Y. Chen, H.-L. Lu, L. Sun, Q.-H. Ren, H. Zhang, X.-M. Ji, W.-J. Liu, S.-J. Ding, X.-F. Yang, D.W. Zhang. Sci. Rep. 6, 38486 (2016)
  28. D. Garcia-Alonso, S. Smit, S. Bordihn, W.M.M. Kessels. Semicond. Sci. Technol. 28, 8, 082002 (2013)
  29. B. Min, J.S. Lee, J.W. Hwang, K.H. Keem, M.I. Kang, K. Cho, M.Y. Sung, S. Kim, M.-S. Lee, S.O. Park, J.T. Moon. J. Crystal Growth 252, 4, 565 (2003)
  30. M. Steglich, A. Bingel, G. Jia, F. Falk. Solar Energy Mater. Solar Cells 103, 62 (2012)
  31. K. Zhao, J. Xie, Y. Zhao, D. Han, Y. Wang, B. Liu, J. Dong. Nanomater. 12, 2, 172 (2022)
  32. A.A. Ryabko, A.I. Maksimov, V.N. Verbitsky, V.S. Levitsky, V.A. Moshnikov, E.I. Terukov. FTP 54, 11, 1251 (2020) (in Russian)
  33. A. Komolov, K. Schaumburg, P.J. Moller, V.V. Monakhov. Appl. Surf. Sci. 142, 1-4, 591 (1999)
  34. J. Joo, B.Y. Chow, M. Prakash, E.S. Boyden, J.M. Jacobson. Nature Mater. 10, 8, 596 (2011)
  35. S. Iaiche, A. Djelloul. J. Spectroscopy 2015, 836859 (2015)
  36. H.H.-Ch. Lai, T. Basheer, V.L. Kuznetsov, R.G. Egdell, R.M.J. Jacobs, M. Pepper, P.P. Edwards. J.Appl. Phys, 112, 8, 083708 (2012)
  37. S. Wu, M.-Y. Lin, S.-H. Chang, W.-C. Tu, C.-W. Chu, Y.-C. Chang. J. Phys. Chem. C 122, 1, 236 (2018)
  38. J. Yang, B.S. Eller, M. Kaur, R.J. Nemanich. J. Vacuum Sci. Technol. A 32, 2, 021514 (2014)
  39. A. Mov skova, M. Mov sko, M. Precner, M. Mikolav sek, A. Rosova, M. Miv cuv si k, V. v Strbi k, J. v Soltys, F. Gucmann, E. Dobrov cka, K. Frohlich. J.Appl. Phys. 130, 3, 035106 (2021)
  40. R.E. Vesto, R. Wilson, H. Choi, K. Kim. AIP Advances 10, 9, 095211 (2020)
  41. S.S. Karpova, V.A. Moshnikov, S.V. Myakin, E.S. Kolovangina. FTP 47, 3, 369 (2013) (in Russian)
  42. S.S. Karpova, V.A. Moshnikov, A.I. Maksimov, S.V. Myakin, N.E. Kazantseva. FTP 47, 8, 1022 (2013) (in Russian)
  43. I.A. Pronin, N.D. Yakushova, I.A. Averin, A.A. Karmanov, A.S. Komolov, M.M. Sychyov, V.A. Moshnikov, E.I. Terukov. Neorgan. materialy 57, 11, 1207 (2021) (in Russian).

Подсчитывается количество просмотров абстрактов ("html" на диаграммах) и полных версий статей ("pdf"). Просмотры с одинаковых IP-адресов засчитываются, если происходят с интервалом не менее 2-х часов.

Дата начала обработки статистических данных - 27 января 2016 г.

Publisher:

Ioffe Institute

Institute Officers:

Director: Sergei V. Ivanov

Contact us:

26 Polytekhnicheskaya, Saint Petersburg 194021, Russian Federation
Fax: +7 (812) 297 1017
Phone: +7 (812) 297 2245
E-mail: post@mail.ioffe.ru