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Formation of InGaAs quantum dots in the body of AlGaAs nanowires via molecular-beam epitaxy
Russian version
DOI: 10.21883/SC.2022.07.54653.16
Reznik R. R.1, Gridchin V. O.1,2,3, Kotlyar K. P.1,2,3, Khrebtov A. I.2, Ubyivovk E. V.1, Mikushev S. V.1, Li D.4, Radhakrishnan R.4, Neto J. F.4, Akopian N.4, Cirlin G. E.1,2,3
1St. Petersburg State University, St. Petersburg, Russia
2Alferov Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg, Russia
3Institute for Analytical Instrumentation of the Russian Academy of Sciences, Saint Petersburg, Russia
4DTU Fotonik, Kongens Lyngby, Denmark
Email: moment92@mail.ru
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The results of experimental studies on the synthesis by molecular-beam epitaxy of AlGaAs nanowires with InGaAs quantum dots are presented. It was shown that, as in the case of the InP/InAsP material system, the formation of predominantly two objects is observed in the body of AlGaAs nanowire: InGaAs quantum dot due to axial growth and InGaAs quantum well due to radial growth. It is important to note that the grown nanostructures were formed predominantly in the wurtzite crystallographic phase. The results of the grown nanostructures physical properties studies indicate that they are promising for moving single-photon sources to the long-wavelength region. The proposed technology opens up new possibilities for integration direct-gap III-V materials with a silicon platform for various applications in photonics and quantum communications. Keywords: semiconductors, nanowires, quantum dots, III-V compounds, silicon, molecular-beam epitaxy.
  1. M. Karimi, V. Jain, M. Heurlin, A. Nowzari, L. Hussain, D. Lindgren, J.E. Stehr, I.A. Buyanova, A. Gustafsson, L. Samuelson. Nano Lett., 17 (6), 3356 (2017)
  2. J.K. Hyun, S. Zhang, L.J. Lauhon. Ann. Rev. Mater. Sci., 43, 451 (2013)
  3. K.W. Ng, W.S. Ko, T.-T.D. Tran, R. Chen, M.V. Nazarenko, F. Lu, V.G. Dubrovskii, M. Kamp, A. Forchel, C.J. Chang-Hasnain. ACS Nano, 7 (1), 100 (2013)
  4. M. Heiss, Y. Fontana, A. Gustafsson, G. Wust, C. Magen, D.D. O'regan, J.W. Luo, B. Ketterer, S. Conesa-Boj, A.V. Kuhlmann, J. Houel, E. Russo-Averchi, J.R. Morante, M. Cantoni, N. Marzari, J. Arbiol, A. Zunger, R.J. Warburton, A. Fontcuberta I Morral. Nature Materials, 12 (5), 439 (2013)
  5. K.S. Leschkies, R. Divakar, J. Basu, E. Enache-Pommer, J.E. Boercker, C.B. Carter, U.R. Kortshagen, D.J. Norris, E.S. Aydil. Nano Lett., 7 (6), 1793 (2007)
  6. A.V. Akimov, A. Mukherjee, C.L. Yu, D.E. Chang, A.S. Zibrov, P.R. Hemmer, H. Park, M.D. Lukin. Nature, 450 (7168), 402 (2007)
  7. M.T. Borgstrom, V. Zwiller, E. Muller, A. Imamoglu. Nano Lett., 5 (7), 1439 (2005)
  8. R.R. Reznik, G.E. Cirlin, I.V. Shtrom, A.I. Khrebtov, I.P. Soshnikov, N.V. Kryzhanovskaya, E.I. Moiseev, A.E. Zhukov. Techn. Phys. Lett., 44 (2), 112 (2018)
  9. V.G. Dubrovskii, G.E. Cirlin, V.M. Ustinov. Phys. Rev. B, 68 (7), 075409 (2003)
  10. L. Leandro, R. Reznik, J.D. Clement, J. Repan, M. Reynolds, E.V. Ubyivovk, I.V. Shtrom, G. Cirlin, N. Akopian. Sci. Rep., 10 (1), 1 (2020)
  11. G.E. Cirlin, I.V. Shtrom, R.R. Reznik, Y.B. Samsonenko, A.I. Khrebtov, A.D. Bouravleuv, I.P. Soshnikov. Semiconductors, 50 (11), 1421 (2016)
  12. G.E. Cirlin, R.R. Reznik, I.V. Shtrom, A.I. Khrebtov, I.P. Soshnikov, S.A. Kukushkin, L. Leandro, T. Kasama, N. Akopian. J. Phys. D, 50 (48), 484003 (2017)
  13. L. Leandro, C.P. Gunnarsson, R. Reznik, K.D. Jons, I. Shtrom, A. Khrebtov, T. Kasama, V. Zwiller, G. Cirlin, N. Akopian. Nano Lett., 18 (11), 7217 (2018)
  14. L. Leandro, J. Hastrup, R. Reznik, G. Cirlin, N. Akopian. NPJ Quant. Inf., 6 (1), 1 (2020)
  15. R.R. Reznik, K.M. Morozov, I.L. Krestnikov, K.P. Kotlyar, I.P. Soshnikov, L. Leandro, N. Akopian, G.E. Cirlin. Techn. Phys. Lett., 1 (2021)
  16. M. Heiss, B. Ketterer, E. Uccelli, J.R. Morante, J. Arbiol, A.F. i Morral. Nanotechnology, 22 (19), 195601 (2011)
  17. J. Tatebayashi, S. Kako, J. Ho, Y. Ota, S. Iwamoto, Y. Arakawa. J. Cryst. Growth, 468, 144 (2017)
  18. J. Tatebayashi, Y. Ota, S. Ishida, M. Nishioka, S. Iwamoto, Y. Arakawa. Appl. Phys. Lett., 105 (10), 103104 (2014)
  19. M.N. Makhonin, A.P. Foster, A.B. Krysa, P.W. Fry, D.G. Davies, T. Grange, T. Walther, M.S. Skolnick, L.R. Wilson. Nano Lett., 13 (3), 861 (2013)
  20. C.T. Huang, J.H. Song, C.M. Tsai, W.F. Lee, D.H. Lien, Z.Y. Gao, Y. Hao, L.J. Chen, Z.L. Wang. Adv. Mater., 36, 4008 (2010)
  21. N. Gogneau, N. Jamond, P. Chretien, F. Houze, E. Lefeuvre, M. Tchernycheva. Semicond. Sci. Technol., 31 (10), 103002 (2016)
  22. P.A. Alekseev, V.A. Sharov, P. Geydt, M.S. Dunaevskiy, V.V. Lysak, G.E. Cirlin, R.R. Reznik, A.I. Khrebtov, I.P. Soshnikov, E. Lahderanta. Phys. Status Solidi: Rapid Res Lett., 12 (1), 1700358 (2018).
  23. A. Kuznetsov, P. Roy, V.M. Kondratev, V.V. Fedorov, K.P. Kotlyar, R.R. Reznik, A.V. Vorobyev, I.S. Mukhin, G.E. Cirlin, A.D. Bolshakov. Nanomaterials, 12 (2), 241 (2022)
  24. R.R. Reznik, G.E. Cirlin, K.P. Kotlyar, I.V. Ilkiv, N. Akopian, L. Leandro, V.V. Nikolaev, A.V. Belonovski, M.A. Kaliteevski. Nanomaterials, 11 (11), 2894 (2021).

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