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Home » Technical Physics Letters » Year 2022, issue 10 » Article p. 17
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Modeling the compositional profiles across axial InSb/GaInSb/InSb nanowire heterostructures
Russian version
DOI: 10.21883/TPL.2022.10.54790.19339
Leshchenko E. D.1, Dubrovskii V. G.2
1Submicron Heterostructures for Microelectronics, Research & Engineering Center, RAS, Saint-Petersburg, Russia
2St. Petersburg State University, St. Petersburg, Russia
Email: leshchenko.spb@gmail.com
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The formation of the double InSb/GaInSb/InSb heterostructure in self-catalyzed and Au-catalyzed nanowires is studied theoretically. We calculate the compositional profiles across the axial heterostructures and study the influence of different growth parameters on the heterointerface properties, including temperature, Sb and Au concentrations. Keywords: III-V nanowires, axial heterostructure, heterointerface, modeling
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