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AlGaAs/InGaAs/GaAs heterostructures for pHEMT switching transistors

Russian version

DOI: 10.21883/TPL.2022.09.55075.19260

Protasov D. Yu. ^1,2, Dmitriev D. V.¹, Zhuravlev K. S. ¹, Ayzenshtat G. I. ³, Yushchenko A. Y. ³, Pashkovsky A. B. ⁴

¹Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia
²Novosibirsk State Technical University, Novosibirsk, Russia
³Scientific and Research Institute of Semiconductors, Tomsk, Russia
⁴JSC "RPC "Istok" named after Shokin", Fryazino, Moscow oblast, Russia

Email: protasov@isp.nsc.ru

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Abstract
References
Статистика просмотров

The pHEMT heterostructures optimized in this work to improve the parameters of switching microwave transistors have a one-sided delta-doping at 6· 10¹² cm^-2 and an AlAs/GaAs spacer. Such heterostructures were used to fabricate the monolithic integrated circuits of single-pole double throw pHEMT switches with gate length and width of 0.5 μm and 100 μm, respectively. The resulting transistors had the following parameters: g_max=400 mS/mm, saturation current I_D=380 mA/mm, ON-state resistance 1.0 Ω· mm, OFF-state capacitance 0.37 pF/mm. The switch parameters at 20 GHz are: insertion loss -2.2 dB, isolation -56 dB, return loss -11.7 dB, linearity P_{1 dB}=21 dBm and IIP₃=40 dBm. Keywords: Single-side doping, spacer design, maximal conductivity, pHEMT, switches.

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