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AlGaAs/InGaAs/GaAs heterostructures for pHEMT switching transistors

Russian version

DOI: 10.21883/TPL.2022.09.55075.19260

Protasov D. Yu. ^1,2, Dmitriev D. V.¹, Zhuravlev K. S. ¹, Ayzenshtat G. I. ³, Yushchenko A. Y. ³, Pashkovsky A. B. ⁴

¹Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia
²Novosibirsk State Technical University, Novosibirsk, Russia
³Scientific and Research Institute of Semiconductors, Tomsk, Russia
⁴JSC "RPC "Istok" named after Shokin", Fryazino, Moscow oblast, Russia

Email: protasov@isp.nsc.ru

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Abstract
References
Статистика просмотров

The pHEMT heterostructures optimized in this work to improve the parameters of switching microwave transistors have a one-sided delta-doping at 6· 10¹² cm^-2 and an AlAs/GaAs spacer. Such heterostructures were used to fabricate the monolithic integrated circuits of single-pole double throw pHEMT switches with gate length and width of 0.5 μm and 100 μm, respectively. The resulting transistors had the following parameters: g_max=400 mS/mm, saturation current I_D=380 mA/mm, ON-state resistance 1.0 Ω· mm, OFF-state capacitance 0.37 pF/mm. The switch parameters at 20 GHz are: insertion loss -2.2 dB, isolation -56 dB, return loss -11.7 dB, linearity P_{1 dB}=21 dBm and IIP₃=40 dBm. Keywords: Single-side doping, spacer design, maximal conductivity, pHEMT, switches.

L. Zhao, W.-F. Liang, J.-Y. Zhou, X. Jiang, IEEE Microwave Wireless Comp. Lett., 27 (5), 485 (2017). DOI: 10.1109/LMWC.2017.2690834
J.-H. Oh, J.K. Mun, J.-K. Rhee, S.-D. Kim, ETRI J., 31 (3), 342 (2009). DOI: 10.4218/etrij.09.0208.0348
J.K. Mun, H.G. Ji, H. Ahn, H. Kim, C.-O. Park, Semicond. Sci. Technol., 20 (8), 677 (2005). DOI: 10.1088/0268-1242/20/8/005
T. Baba, T. Mizutani, M. Ogawa, J. Appl. Phys., 59 (2), 526 (1986). DOI: 10.1063/1.336663
D.Yu. Protasov, K.S. Zhuravlev, Solid-State Electron., 129, 66 (2017). DOI: 10.1016/j.sse.2016.12.013
D.A. Safonov, A.N. Vinichenko, N.I. Kargin, I.S. Vasil'evskii, Tech. Phys. Lett., 44 (2), 145 (2018). DOI: 10.1134/S106378501802027X
R. Chwang, B.J. Smith, C.R. Crowell, Solid-State Electron., 17 (12), 1217 (1974). DOI: 10.1016/0038-1101(74)90001-X
Q. Xiao, G. Samiotes, T. Galluccio, B. Rizzi, in Proc. 39th Eur. Microwave Conf. (IEEE, 2009), p. 1673. DOI: 10.23919/EUMC.2009.5296295
J.-K. Mun, J.-H. Oh, H.-K. Sung, C. Wang, Solid-State Electron., 114, 121 (2015). DOI: 10.1016/j.sse.2015.09.007

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