Technical Physics Letters
To authors
AlGaAs/InGaAs/GaAs heterostructures for pHEMT switching transistors
Protasov D. Yu. 1,2, Dmitriev D. V.1, Zhuravlev K. S. 1, Ayzenshtat G. I. 3, Yushchenko A. Y. 3, Pashkovsky A. B. 4
1Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia
2Novosibirsk State Technical University, Novosibirsk, Russia
3Scientific and Research Institute of Semiconductors, Tomsk, Russia
4JSC "RPC "Istok" named after Shokin", Fryazino, Moscow oblast, Russia
2Novosibirsk State Technical University, Novosibirsk, Russia
3Scientific and Research Institute of Semiconductors, Tomsk, Russia
4JSC "RPC "Istok" named after Shokin", Fryazino, Moscow oblast, Russia
Email: protasov@isp.nsc.ru
The pHEMT heterostructures optimized in this work to improve the parameters of switching microwave transistors have a one-sided delta-doping at 6· 1012 cm-2 and an AlAs/GaAs spacer. Such heterostructures were used to fabricate the monolithic integrated circuits of single-pole double throw pHEMT switches with gate length and width of 0.5 μm and 100 μm, respectively. The resulting transistors had the following parameters: gmax=400 mS/mm, saturation current ID=380 mA/mm, ON-state resistance 1.0 Ω· mm, OFF-state capacitance 0.37 pF/mm. The switch parameters at 20 GHz are: insertion loss -2.2 dB, isolation -56 dB, return loss -11.7 dB, linearity P1 dB=21 dBm and IIP3=40 dBm. Keywords: Single-side doping, spacer design, maximal conductivity, pHEMT, switches.
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