Semiconductors
To authors
Volumes and Issues
- 2024
- 2023
- 2022
Features in the behavior of temperature dependences of magnetic susceptibility of crystals of Bi2Te3-Sb2Te3 solid solutions containing from 25 to 70 percent antimony telluride
Stepanov N. P.
1, Ivanov M. S.
2
1Transbaikal State University, Chita, Russia
2Trans-Baikal Institute of Railway Transport, Chita, Russia
2Trans-Baikal Institute of Railway Transport, Chita, Russia
Email: np-stepanov@mail.ru, vanov.maks@mail.ru
Temperature dependences of the magnetic susceptibility of p-type crystals of Bi2Te3-Sb2Te3 solid solutions containing from 25 to 70 mol percent antimony telluride were examined in the range from 2 to 400 K. A correlation was found between the features observed in the behavior of temperature dependences of the magnetic susceptibility of crystals containing 60 and 70 mol percent Sb2Te3 and the ratio of the plasmon energy to the energy of the gap between the chemical potential level and the heavy hole subband. An assumption is formulated that in the case of convergence of these energies, the increasing electron-plasmon interaction affects the electron system state and, consequently, the magnitude of magnetic susceptibility. Keywords: bismuth and antimony tellurides, magnetic susceptibility, plasmon, interband transitions, electron-plasmon interaction.
- B.M. Gol'tsman, V.A. Kudinov, I.A. Smirnov. Poluprovodnikovye termoelektricheskie materialy na osnove Vi2Te3 (M., Nauka, 1972) (in Russian)
- A.N. Veis, L.N. Lukyanova, O.A. Usov. Semiconductors, 56 (3), 230 (2022)
- A.A. Kudryashov. Extended Abstract of Candidate's Dissertation (M., Mosk. Gos. Univ., 2016) (in Russian)
- Y.L. Chen, J.G. Analytis, J.-H. Chu, Z.K. Liu, S.-K. Mo, X.L. Qi, H.J. Zhang, D.H. Lu, X. Dai, Z. Fang, S.C. Zhang, I.R. Fisher, Z. Hussain, Z.-X. Shen. Science, 325, 178 (2009)
- V.A. Kul'bachinskii, H. Ozaki, Y. Miyahara, K. Funagai. J. Exp. Theor. Phys., 97, 1212 (2003)
- B. Ronnlund, O. Beckman, H. Levy. J. Phys. Chem. Solids, 26, 1281 (1965)
- L.D. Ivanova, Yu.V. Granatkina. Inorg. Mater., 36 (7), 672 (2000)
- A.A. Kudryashov, V.G. Kytin, R.A. Lunin, V.A. Kulbachinskii, A. Banerjee. Semiconductors, 50 (7), 869 (2016)
- S.A. Nemov, Yu.V. Ulashkevich, A.A. Rulimov, A.E. Demchenko, A.A. Allahkhah, I.V. Sveshnikov, M. Dzhafarov. Semiconductors, 53 (5), 603 (2019)
- M.K. Zhitinskaya, S.A. Nemov, T.E. Svechnikova, P. Reinshaus, E. Muller. Semiconductors, 34 (12), 1363 (2000)
- N.P. Stepanov, V.Yu. Nalivkin, A.K. Gil'fanov, A.A. Kalashnikov, E.N. Trubitsyna. Fiz. Tekh. Poluprovodn., 55 (12), 1162 (2021) (in Russian)
- A. Van Itterbeek, N. Van Deynse, C. Herinckx. Physica, 32, 2123 (1966)
- R. Mansfield. Proc. Phys. Soc., 74, 599 (1960)
- O. Busch, E. Mooser. Helv. Phys. Acta, 26, 611 (1953)
- N.P. Stepanov, V.Yu. Nalivkin. Russ. Phys. J., 59, 84 (2016)
- M. Matyas. Czech. J. Phys., 8, 309 (1958)
- M.P. Zayachkovskii, D.M. Bercha, I.F. Zayachkovskaya. Ukr. Fiz. Zh., 23, 1119 (1978) (in Russian)
- A.A. Andreev, V.N. Rodionov. Fiz. Tekh. Poluprovodn., 1, 183 (1967) (in Russian)
- K. Shogenji, T. Sato. J. Phys. Soc. Jpn., 17, 727 (1962)
- P.M. Platzman, P.A. Wolff. Waves and Interactions in Solid State Plasmas (Academic, 1973)
- V.B. Gildenburg, V.A. Kostin, I.A. Pavlichenko. Phys. Plasmas, 18 (9), 2101 (2011)
- D.J. Bergman, M.I. Stockman. Phys. Rev. Lett., 90 (2), 7402 (2003)
- R.Charbonneau, N. Lahoud, G. Mattiuse, P. Berini. Opt. Express, 13 (17), 977 (2005)
- A.S. Zlenko, V.M. Mashinsky, L.D. Iskhakova, S.L. Semjonov, V.V. Koltashev, N.M. Karatun, E.M. Dianov. Opt. Express, 20 (21), 23186 (2012).
- V. M. Muravev, P. A. Gusikhin, I. V. Andreev, I. V. Kukushkin. Phys. Rev. Lett., 114, 106805 (2015)
- D. Pines. Elementary Excitations In Solids (Basic Books, 1963)
- P.A. Wolff. Phys. Rev. Lett., 24, 266 (1970)
- P. Tussing, W. Rosental, A. Hang. Phys. Status Solidi B, 52 (2), 451 (1972)
- A. Elci. Phys. Rev. B, 16, 5443 (1977)
- R. Sehr, L.R. Testardi. J. Phys. Chem. Solids, 23, 1219 (1962)
- N.P. Stepanov, A.A. Kalashnikov, O.N. Uryupin. Semiconductors, 55 (7), 637 (2021)
- N.P. Stepanov, V.M. Grabov. Semiconductors, 36 (9), 971 (2002)
- A.M. Dyugaev. JETP Lett., 55 (5), 269 (1992).
Подсчитывается количество просмотров абстрактов ("html" на диаграммах) и полных версий статей ("pdf"). Просмотры с одинаковых IP-адресов засчитываются, если происходят с интервалом не менее 2-х часов.
Дата начала обработки статистических данных - 27 января 2016 г.