Technical Physics Letters
To authors
Creation of an antireflection coating for the optical range based on a nanoporous germanium layer formed by implantation with indium ions
Stepanov A. L.
1, Nuzhdin V. I.1, Valeev V. F.1, Konovalov A. L.1, Rogov A. M.1
1Zavoisky Physical-Technical Institute, FRC Kazan Scientific Center of RAS, Kazan, Russia
Email: aanstep@gmail.com
The possibility of using a nanoporous Ge layer formed by implantation with 115In+ ions on a monocrystal c-Ge substrate as an antireflection optical coating (In:PGe) was studied. For this purpose, ion implantation of c-Ge wafers was performed at an energy E=30 keV, current density in the ion beam J=5 μA/cm2, and dose D=1.8· 1016 ion/cm2. It was shown that the fabricated In:PGe spongy layer, which consists of intertwining Ge nanowires, is characterized by a low reflectivity (~ 5%) in a wide optical spectral range of 250-1050 nm. Keywords: nanoporous germanium, ion implantation, antireflection optical coating.
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