Sidorov Yu.G.
1, Sidorov G. Yu.
1, Varavin V.S.
11Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia
Email: sidorov@isp.nsc.ru, george@isp.nsc.ru, varavin@isp.nsc.ru
Influence of water solutions with various pH and electrochemical treatment in cathode position on concentration of charge carriers in samples CdxHg1-xTe with x=0.2-0.3 is investigated. Cathodic treatment cadmium-mercury-tellurium at small density current increases concentration of donors, and at high density acceptors are formed. It is supposed that hydroxyl groups create acceptors centers, introduce in interstitial cadmium-mercury-tellurium. At treatment for a long time (it is more than 20 h) or acceptors are formed with concentration at level of 1016 cm-3 (at high activity of hydrogen), or donors with concentration of 1014 cm-3 (at low activity of hydrogen) are uniform distribution on all thickness of cadmium-mercurytellurium film and does not vary with the subsequent increase in time of treatment. Keywords: CdHgTe, electrochemical treatment, acceptors, activity of hydrogen.
- G.Yu. Sidorov, Yu.G. Sidorov, V.A. Shwets, V.S. Varavin. Semiconductors, 55 (5), 461 (2021)
- G.Yu. Sidorov, Yu.G. Sidorov, V.S. Varavin. Phys. Status Solidi C, 7 (6), 1630 (2010)
- G.Yu. Sidorov, D.V. Gorshkov, I.V. Sabinina, Yu.G. Sidorov, V.S. Varavin, A.V. Predein, M.V. Yakushev, D.G. Ikusov. Prikl. Fiz., 3, 45 (2019) (in Russian)
- W.M.C. Hughes, M.L. Swanson, J.C. Austin. J. Electron. Mater., 22 (8), 1011 (1993)
- Zs. Rak, S.D. Mahanti, Krishna C. Mandal. J. Electron. Mater., 38 (8), 1539 (2009)
- M.V. Yakushev, D.V. Brunev, V.S. Varavin, S.A. Dvoretskii, A.V. Predein, I.V. Sabinina, Yu.G. Sidorov, A.V. Sorochkin, A.O. Suslyakov. Optoelectron., Instrum. Data Process., 45 (4), 301 (2009)
- M.Kh. Karapet'yants. Vvedenie v teoriyu khimicheskikh protsessov (M., Vyssh. Shk., 1970) (in Russian).
Подсчитывается количество просмотров абстрактов ("html" на диаграммах) и полных версий статей ("pdf"). Просмотры с одинаковых IP-адресов засчитываются, если происходят с интервалом не менее 2-х часов.
Дата начала обработки статистических данных - 27 января 2016 г.