Technical Physics Letters
To authors
Luminescent response of photonic crystals with embedded Ge nanoislands with different hole etching depths
Yurasov D.V.
1, Yablonskiy A.N.1, Shaleev M.V.1, Shengurov D.V.1, Rodyakina E.E.2,3, Smagina Zh. V.2, Verbus V.A.1,4, Novikov A.V.1
1Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, Russia
2Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia
3Novosibirsk State University, Novosibirsk, Russia
4National Research University Higher School of Economics, Nizhny Novgorod, Russia
2Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia
3Novosibirsk State University, Novosibirsk, Russia
4National Research University Higher School of Economics, Nizhny Novgorod, Russia
Email: Inquisitor@ipmras.ru
Two-dimensional Si-based photonic crystals with embedded Ge nanoislands were studied. In particular, dependences of the steady-state and time-resolved photoluminescence response on the depth of the air-holes which form the photonic crystal itself were investigated. It was shown that the maximum luminescence intensity was observed not for the fully-etched photonic crystals but for the intermediately etched ones. The possible origin of such a behavior is discussed. Keywords: SiGe heterostructures, Ge islands, Photonic crystals, Photoluminescence, non-radiative recombination.
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