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Investigation of a p-i-n photodetector with an absorbing medium based on InGaAs/GaAs quantum well-dots
Kryzhanovskaya N.V.
1, Blokhin S.A.
2,1, Makhov I. S.
1, Moiseev E. I.
1, Nadtochiy A. M.
1, Fominykh N. A.
1, Mintairov S. A.2, Kaluyzhnyy N. A.2, Guseva Yu. A.2, Kulagina M. M.2, Zubov F. I.3,1, Kolodeznyi E.S.
4, Maximov M.V.
3,1, Zhukov A. E.
1
1HSE University, St. Petersburg, Russia
2Ioffe Institute, St. Petersburg, Russia
3Alferov Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg, Russia
4ITMO University, St. Petersburg, Russia
2Ioffe Institute, St. Petersburg, Russia
3Alferov Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg, Russia
4ITMO University, St. Petersburg, Russia
Email: blokh@mail.iioffe.ru, imahov@hse.ru, emoiseev@hse.ru, al.nadtochy@mail.ioffe.ru, fominy-nikita@yandex.ru, evgenii_kolodeznyi@itmo.ru, maximov.mikh@gmail.com, zhukale@gmail.com
The static and dynamic characteristics of waveguide photodetectors with an absorbing region based on InGaAs/GaAs quantum well-dots were studied at room temperature. The absorption band of InGaAs/GaAs quantum well-dots is in the spectral range from 900 to 1100 nm. The waveguide photodetectors have a width of 50 μm and a length of the absorbing region from 92 μm to 400 μm. A low dark current density (1.1 and 22 μA/cm2 at -1 and -20 V) and cut off frequency of 5.6 GHz, limited by the time constant of a parasitic equivalent electric RC-circuit, were obtained. Keywords:waveguide photodetector, modulation frequency, quantum well-dots, integrated photonics.
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