Technical Physics
To authors
Influence of the homobuffer layer on the morphology, microstructure, and hardness of Al/Si(111) films
Lomov A. A.1, Zakharov D. M.1, Tarasov M. A.2, Chekushkin A. M.2, Tatarintsev A. A.1, Kiselev D. A.3, Ilyina T. S.3, Seleznev A. E.4
1Valiev Institute of Physics and Technology of RAS, Moscow, Russia
2Kotelnikov Institute of Radio Engineering and Electronics, Russian Academy of Sciences, Moscow, Russia
3National University of Science and Technology MISiS, Moscow, Russia
4Moscow State Technological University STANKIN, Moscow, Russia
2Kotelnikov Institute of Radio Engineering and Electronics, Russian Academy of Sciences, Moscow, Russia
3National University of Science and Technology MISiS, Moscow, Russia
4Moscow State Technological University STANKIN, Moscow, Russia
Email: lomov@ftian.ru
The results of complementary studies of Al films grown by magnetron sputtering at room temperature are presented. The films were obtained on standard Si(111) substrates without and with a ~20 nm aluminum (homobuffer) layer preliminarily grown on their surface at 400oC. The interdependence of the morphology, microstructure, and hardness of Al films on the state of the substrate surface was studied by the HRXRR, XRD, SEM, EDS, AFM, and Nano Indenter (ASTM) methods. It is shown that the formation of homobuffer layers on the substrate surface makes it possible to control the structural and mechanical properties of thin aluminum films. Keywords: aluminium, thin films, morphology, microstructure, XRD, SEM and AFM, naation, magnetron sputtering. DOI: 10.61011/TP.2023.07.56624.83-23
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