Technical Physics
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- 2022
Investigation of the angular dependences of the velocities of ion-beam sputtering of metals for the synthesis of mask blanks
An alternative material has been proposed as an absorber for a mask blank for lithography in the vicinity of a wavelength of 11.2 nm - Ni. It has been established in this work that the optimal angle for efficient sputtering of Ru, Be, and Ni targets by accelerated argon ion sources for fabrication of a Ru/Be multilayer structure with an upper Ni layer is an angle of 60o degrees. At this angle, the etching rate for all three materials is 35±5 nm/min at an argon ion energy of 800 eV and an ion current density of 0.5 mA/cm2. Keywords: lithography, photomask, X-ray mirror, ion sputtering, ion etching. DOI: 10.61011/TP.2023.07.56649.115-23
- S. Bajt, R.D. Behymer, P.B. Mirkarimi, C. Montcalm, M.A. Wall. Experimental Investigation of Beryllium-Based Multilayer Coatings for Extreme Ultraviolet Lithography. Proc. SPIE 3767, 259 (1999)
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- N.I. Chkhalo, N.N. Salashchenko. AIP Advances, 3, 082130 (2013)
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- R.M. Smertin, N.I. Chkhalo, M.N. Drozdov, S.A. Garakhin, S.Yu. Zuev, V.N. Polkovnikov, N.N. Salashchenko, P.A. Yunin. Opt. Express, 30 (26), 46749 (2022)
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- Electronic source. Available at: https://henke.lbl.gov/optical_constants/
- P.-Y. Yan, Y. Liu, M. Kamna, G. Zhang, R. Chen, F. Martinez. EUVL Multilayer Mask Blank Defect Mitigation for Defect-Free EUVL Mask Fabrication. Proc. SPIE 8322, Extreme Ultraviolet (EUV) Lithography III, 83220Z (2012). DOI: 10.1117/12.927018
- M.S. Mikhailenko, N.I. Chkhalo, I.A. Kaskov, I.V. Malyshev, A.E. Pestov, V.N. Polkovnikov, N.N. Salashchenko, M.N. Toropov, I.G. Zabrodin. Precision Engineering, 48, 338 (2017). DOI: 10.1016/j.precisioneng.2017.01.004
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Дата начала обработки статистических данных - 27 января 2016 г.