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The effect of surface traps on the static characteristics and the saturation current spread in the channel of GaN HEMTs
Russian version
Tikhomirov V. G. 1, Chizhikov S. V. 2, Gudkov A. G. 2, Ustinov V. M.3
1St. Petersburg State Electrotechnical University “LETI", St. Petersburg, Russia
2Bauman Moscow State Technical University, Moscow, Russia
3Submicron Heterostructures for Microelectronics, Research & Engineering Center, RAS, Saint-Petersburg, Russia
Email: greenbob54@gmail.com, chigikov95@mail.ru, profgudkov@gmail.com, vmust@beam.ioffe.ru
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The article discusses the method of neutralization of surface traps in the structures of gallium nitride transistors with high electron mobility (GaN HEMT), based on the use of step-by-step temperature exposure - thermal training. Calculations and experimental studies of the effect of traps on the static characteristics of GaN HEMT have been carried out, and effective ways of dealing with traps have been proposed, in particular, using the proposed optimal thermal training modes. Keywords: surface traps, HEMT, GaN.
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