Grigorieva N. R.1, Mikhailov A. V. 2, Khramtsov E. S. 2, Ignatiev I. V.2
1St. Petersburg State University, St. Petersburg, Russia
2SOLAB Spin-optic laboratory, Saint-Petersburg state university, St. Petersburg, Russia
Email: n.r.grigorieva@spbu.ru
The reflection spectra of a high-quality heterostructure with a narrow quantum well InxGa1-xAs/GaAs (x=0.022) are studied. Microscopic modeling of the exciton spectrum is performed using a numerical solution of the three-dimensional Schrodinger equation. It is shown that two exciton resonances below the free exciton energy in GaAs are formed by a heavy hole exciton localized in a quantum well. The potential profile of a quantum well is determined within the framework of a theoretical model with parameters calculated ab initio. For the studied structure, the ratio of the discontinuities of the valence band (Ev) and the conduction band (Ec) is obtained: E_c:E_v=64:36. Keywords: excitons, polaritons, heterostructures, quantum well, microscopic calculation.
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