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Gradient layers in a four-component Al-Ga-As-Sn system growth by liquid-phase epitaxy

Russian version

Potapovich N. S.

¹, Khvostikov V. P.

¹, Khvostikova O. A.

¹, Vlasov A. S.¹

¹Ioffe Institute, St. Petersburg, Russia

Email: nspotapovich@mail.ioffe.ru

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Abstract
References
Статистика просмотров

The growth of thick (more than 50 μm) Al_xGa_1-xAs gradient layers in the Al-Ga-As-Sn system has been modeled. Sn-doped Al_xGa_1-xAs layers up to 85 μm thick were obtained by liquid-phase epitaxy. The obtained experimental profiles of the Al_xGa_1-xAs composition gradient satisfy the used theoretical model for the cases of growth from a limited volume of a solution-melt. Keywords: Liquid phase epitaxy, AlGaAs, phase equilibrium, photovoltaic cell, gradient layers.

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