Technical Physics
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Gradient layers in a four-component Al-Ga-As-Sn system growth by liquid-phase epitaxy
Potapovich N. S.
1, Khvostikov V. P.
1, Khvostikova O. A.
1, Vlasov A. S.1
1Ioffe Institute, St. Petersburg, Russia
Email: nspotapovich@mail.ioffe.ru
The growth of thick (more than 50 μm) AlxGa1-xAs gradient layers in the Al-Ga-As-Sn system has been modeled. Sn-doped AlxGa1-xAs layers up to 85 μm thick were obtained by liquid-phase epitaxy. The obtained experimental profiles of the AlxGa1-xAs composition gradient satisfy the used theoretical model for the cases of growth from a limited volume of a solution-melt. Keywords: Liquid phase epitaxy, AlGaAs, phase equilibrium, photovoltaic cell, gradient layers.
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