Physics of the Solid State
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Formation of a light-scattering microrelief during atomic-layer deposition of a dielectric layer on a nanostructured film of indium-tin oxide
Aksenova V. V.1, Smirnova I. P.
1, Markov L. K.
1, Pavlyuchenko A. S.
1, Kolokolov D. S.
2, Mesh M. V.2
1Ioffe Institute, St. Petersburg, Russia
2JSC Koltsov’s Design Bureau, St.-Petersburg, Russia
2JSC Koltsov’s Design Bureau, St.-Petersburg, Russia
Email: valeriyaakse@gmail.com, irina@quantum.ioffe.ru, l.markov@mail.ioffe.ru, alexey.pavluchenko@gmail.com, k.d@koltsov-kb.ru, mesh@koltsov-kb.ru
This paper presents a method for creating a light-scattering relief at the stage of formation of the lower dielectric layer of electroluminescent displays. To study the process of formation of a light-scattering relief, films with different thicknesses of the Al2O3 layer were fabricated, SEM images of cross-sections of the formed films were taken, and the luminous intensity angular distribution of scattered light were measured. It is demonstrated that the relief obtained at the dielectric boundary creates a light-scattering structure that improves the light extraction efficiency from the active layer of an electroluminescent display. Keywords: nanostructured ITO, light scattering relief, light extraction efficiency.
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- L.K. Markov, I.P. Smirnova, M.V. Kukushkin, A.S. Pavluchenko. Semiconductors 54 (2020)
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Дата начала обработки статистических данных - 27 января 2016 г.