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Ferromagnetic GaMnAs layers obtained by implantation of manganese ions followed by pulsed laser annealing
Russian version
Danilov Yu.A.1, Agafonov Yu.A.2, Bachurin V.I. 3, Bykov V.A.1, Vikhrova O.V.1, Zinenko V.I.2, Kalentyeva I.L.1, Kudrin A.V.1, Nezhdanov A.V. 1, Parafin A.E. 4, Simakin S.G. 3, Yunin P.A. 4, Yakovleva A.A. 1
1Lobachevsky State University, Nizhny Novgorod, Russia
2Institute of Microelectronics Technology and High Purity Materials, Russian Academy of Sciences, Chernogolovka, Russia
3Valiev Institute of Physics and Technology of RAS, Yaroslavl Branch, Yaroslavl, Russia
4Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, Russia
Email: danilov@nifti.unn.ru, vikhrova@nifti.unn.ru
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Using the methods of secondary ion mass spectrometry, X-ray diffraction, Raman scattering, measurements of the Hall effect and magnetoresistance, and magnetic circular dichroism, an experimental study of the properties of layers obtained by implanting manganese ions (energy of 180 keV) into semi-insulating gallium arsenide was carried out, followed by annealing with a KrF excimer laser pulse. It has been shown that at ion doses from 1·1016 to 5·1016 cm-2 and a laser energy density of 300 mJ/cm2, heavily doped layers of p-type conductivity are formed, which, according to the results of studies by different methods, have ferromagnetic properties with a Curie temperature that depends on the dose ions and reaching 120 K. The influence of ion sputtering on impurity profiles is considered and taken into account in this work. It was found that during subsequent laser annealing, segregation of Mn atoms to the GaAs surface is observed. Keywords: gallium arsenide, implantation of Mn ions, laser annealing, anomalous Hall effect, ferromagnetism, Curie temperature.
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