Physics of the Solid State
Microstructure features of nanosized AsSb precipitates in LT-GaAsSb
Snigirev L.A.
1, Myasoedov A.V.
1, Bert N. A.
1, Preobrazhenskii V. V.
2, Putyato M. A.
2, Semyagin B. R.
2, Chaldyshev V.V.
1
1Ioffe Institute, St. Petersburg, Russia
2Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia
2Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia
Email: leonidsnigirev17@gmail.com, amyasoedov88@gmail.com, nikolay.bert@mail.ioffe.ru, chald.gvg@mail.ioffe.ru
The structural state of AsSb precipitates formed upon annealing of non-stoichometric GaAs0.97Sb0.03, epitaxial layer grown by molecular beam epitaxy on a GaAs (001) substrate at a temperature of 150oC, was investigated using transmission electron microscopy. New orientation relationships between AsSb precipitates with a rhombohedral lattice and the zincblende LT-GaAsSb matrix subjected to isothermal annealing at temperatures below 800oC for 15 minutes, were discovered: 1012p||111m and <2201>p||<110>m. These orientation relationships differ from those known for As precipitates (0003)p||111m; <1210>p||<110>m and take place for particles with size less than ~10 nm. For particles smaller than ~7 nm, electron microscopy results allow to hypothesize a transition to the cubic phase Pm3m. Keywords: Non-stoichiometric GaAsSb, precipitation, transmission electron microscopy, orientation relationships.
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