Pilyugin I. I.1
1Ioffe Institute, St. Petersburg, Russia
Email: i.pilyugin@mail.ioffe.ru
A model of ion desorption from the surface of a semiconductor NaxAuy is constructed under the assumption of repulsion of ions from a double electric layer of charges of density rho on the surface formed with a weak pulling electric field E. It is shown that carriers from the semiconductor volume do not participate in the formation of a double electric layer of charges on the surface. The new model of ion desorption is confirmed by the discovered experimental dependence of ion yield on temperature. Keywords: surface ionization, double electric layer on the surface, ion desorption model.
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