Physics of the Solid State
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Modulation of dielectric permittivity of photorefractive GaAs semiconductor during holographic grating recording
Naunyka V.N.
1
1Mozyr State Pedagogical University named after I.P.Shamyakin, Mozyr, Republic of Belarus
Email: valnav@inbox.ru
The peculiarities of dielectric permittivity modulation of photorefractive GaAs crystal at recording of phase holographic grating as a result of coherent mixing of two light waves are analyzed. In the crystallographic coordinate system, a surface showing the dependence of the maximum values of the normal component of the change of the inverse tensor components of the dielectric permittivity of the crystal on the spatial orientation of the wave vector of the hologram has been constructed. Theoretical calculations take into account linear electro-optical, photoelastic and inverse piezoelectric effects. It was found that the largest values of the normal component of the change of the inverse tensor components of the dielectric permittivity of the GaAs crystal are achieved if the wave vector of the hologram lies in one of the 110 planes and is at an angular distance of about 4^o from the <110> axis lying in the plane. The refractive index modulation value, close to the largest value, can be achieved when the hologram wave vector is oriented along the <110> direction. Keywords: photorefractive semiconductor, holographic grating, dielectric permittivity, two-wave mixing.
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