This study presents an analysis of the morphological and electrical properties of multilayer structures fabricated using thin films of organometallic halide perovskites (OHP), specifically CH₃NH₃PbI₃, deposited onto the surface of crystalline silicon (c-Si)-based solar cells. The structural morphology and electrical characteristics of these multilayered configurations were investigated through atomic force microscopy (AFM), current-voltage (I-V) characterization, and impedance spectroscopy. The AFM observations revealed significant morphological variations among the produced samples. I-V analysis conducted at 300 K indicated that all samples exhibited enhanced photoconductivity relative to pure c-Si, suggesting a beneficial influence of the perovskite layer. Impedance spectroscopy analysis revealed that in the absence of light, a sample with a perovskite layer on c-Si displayed two semicircles in its Nyquist plot, implying the coexistence of two distinct processes, such as ion diffusion or charge recombination. These processes appear to converge into a single mechanism upon exposure to light, a change attributed to the altered concentration of charge carriers. The findings of this research pave the way for further optimization and enhancement of the performance parameters of advanced tandem c-Si solar cells with top layers composed of organometallic halide perovskites. Keywords: impedance spectroscopy, electrical conductivity, solar cells, organic-inorganic perovskites, crystalline silicon.

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Дата начала обработки статистических данных - 27 января 2016 г.