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Absorption of microwave radiation and magnetoresistance oscillations in InAs/GaSb composite quantum wells with inverted band spectrum in a quantizing magnetic field (R e v i e w)
Russian version
Mikhailova M. P.1, Ivanov E. V. 1, Semenikhin P. V.1, Parfeniev R. V.1
1Ioffe Institute, St. Petersburg, Russia
Email: Mayamikh@mail.ru, Ed@mail.ioffe.ru, Psemenikhin@mail.ioffe.ru, R.Parfeniev@mail.ioffe.ru
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Magnetotransport properties of the nanoheterostructures based on InAs/GaSb composite quantum wells with a semimetal band spectrum grown by metal organic vapor phase epitaxy on n-GaSb and n-InAs substrates with different carrier concentrations are discussed. The experimental results were obtained by means of the contactless technique of electron paramagnetic resonance at the study of temperature and angular dependences of microwave radiation absorption and magnetoresistance oscillations in the wide range of temperature (2.7-270 K) and magnetic field (up to 1.4 T). The possibility of using electron paramagnetic resonance spectroscopy to study spin-dependent phenomena in two-dimensional heterostructures with an inverted band spectrum in magnetic field has been demonstrated. In particular, we discuss the magnetophonon oscillations of magnetoresistance caused by resonant scattering of 2D-electrons on interface acoustic phonons in the quantizing magnetic field, which were discovered and investigated in heterostructures with InAs/GaSb quantum wells grown on n0-InAs substrate. Keywords: InAs/GaSb composite quantum well, inverted band spectrum, electron paramagnetic resonance, absorption of microwave radiation, acoustic phonons, Shubnikov-de Haase oscillations, magnetophonon oscillations of magnetoresistance.
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