The mechanism of resistive switching in memristors based on organometallic perovskites
Alekseev N. I.1,2, Aleshin A. N.1
1Ioffe Institute, St. Petersburg, Russia
2St. Petersburg State Electrotechnical University “LETI", St. Petersburg, Russia
Email: NIAlekseyev@yandex.ru
The mechanisms of current transfer in a film of organometallic perovskite are analyzed. It is shown that the current is mainly determined by the transfer of halogen ions and halogen vacancies, and the volt-ampere characteristics (VAC) of the metal|perovskite|metal structure should be close to exponential. The experimental VAC obtained up to the moment of resistive switching is well described by the model of electron transfer along the boundaries of perovskite grains. The possibility of a specific switching mechanism associated with the splitting of the film volume into vortex cells of the Benard cell type is also shown. An assessment of the possible size of such cells and the threshold of their formation is made. Keywords: electrical conductivity, dissipative structures, physical model.
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