In memory of I.T. Serenkov Silicon avalanche photodiode with photoresponse rise time less than 350 ps at wavelength 1064 nm
Aruev P. N. 1, Gadzhiev I. M. 1, Zabrodsky V. V. 1, Nikolaev A. V. 1, Sherstnev E. V. 1
1Ioffe Institute, St. Petersburg, Russia
Email: a.v.nikolaev@mail.ioffe.ru
The optical, electrical and dynamic characteristics of the developed silicon avalanche photodiode with an active area diameter of 350 μm were studied. It is shown that the developed avalanche photodiode has the following set of characteristics: external quantum output is 215 electrons/photon at a wavelength of 1064 nm, dark current is 0.77 nA, multiplication factor is 2353, rise time is less than 350 ps at a reverse bias voltage of 274 V. Keywords: silicon, avalanche photodiode, near-infrared, lidar.
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