M.A. Kudryashov1,2, L.A. Mochalov1,2, M.A. Vshivtsev1, I.O. Prokhorov1,2, Yu.M. Spivak3, V.A. Moshnikov3, Yu.P. Kudryashova2, P.V. Mosyagin2, E.A. Slapovskaya2, V.M. Malyshev1
1Alekseev State Technical University, Nizhny Novgorod, Russia
2Lobachevsky State University, Nizhny Novgorod, Russia
3St. Petersburg State Electrotechnical University “LETI", St. Petersburg, Russia
Email: ymkanageeva@yandex.ru
Gallium sulfide (GaS) has a great potential for applications in optoelectronics and energy storage. In view of the sufficiently large Eg, thin films of gallium sulfide can be used as a buffer layer in a solar cell. GaS also provides efficient passivation of the GaAs surface. In this work, Ga-S thin films were obtained for the first time by plasma-chemical vapor deposition. High-purity elemental Ga and S were used as precursors. The plasma was excited by an RF generator (40.68 MHz) at a reduced pressure of 0.1 Torr. The composition, structural and optical properties of Ga-S films were studied depending on the substrate temperature. All films were highly transparent (75%) in the range of 400-1100 nm. Keywords: gallium sulfide, films, PECVD, structure, optical properties.
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