Yurasov D.V.1, Novikov A.V.1, Shaleev M.V.1, Drozdov M.N.1, Demidov E.V.1, Antonov A.V.1, Krasilnikova L.V.1, Shmyrin D.A.1, Yunin P.A.1, Krasilnik Z.F.1, Sitnikov S.V.2, Sheglov D.V.2
1Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, Russia
2Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia
Email: Inquisitor@ipmras.ru, anov@ipmras.ru, shaleev@ipmras.ru, drm@ipmras.ru, demidov@ipmras.ru, aav@ipmras.ru, luda@ipmras.ru, shmyrinda@ipmras.ru, yunin@ipmras.ru, zfk@ipmras.ru, sitnikov@isp.nsc.ru, sheglov@isp.nsc.ru
In this work, isotopically purified 28Si/28Si72Ge heterostructures were fabricated by molecular beam epitaxy. The obtained residual concentration of the 29Si and 73Ge isotopes with non-zero nuclear spin was of the order of 1-2 hundred ppm. The maximum electron mobility in the two-dimensional electron gas formed in these structures reached ~ 4.5· 104 cm2/(V· s) at T=1.6 K, which confirms high quality of the fabricated samples. Low concentration of Si and Ge isotopes with non-zero nuclear spin and high crystalline quality allows using such structures in fabricating electron spin qubits. Keywords: SiGe heterostructures, isotopic purification, molecular beam epitaxy, secondary ion mass spectroscopy, spin qubit.
- N.P. de Leon, K.M. Itoh, D. Kim, K.K. Mehta, T.E. Northup, H. Paik, B.S. Palmer, N. Samarth, S. Sangtawesin, D.W. Steuerman, Science, 372, eabb282 (2021). DOI: 10.1126/science.abb2823
- Y. Kim, A. Eddins, S. Anand, K.X. Wei, E. van den Berg, S. Rosenblatt, H. Nayfeh, Y. Wu, M. Zaletel, K. Temme, A. Kandala, Nature, 618, 500 (2023). DOI: 10.1038/s41586-023-06096-3
- C.D. Bruzewicz, J. Chiaverini, R. McConnell, J.M. Sage, Appl. Phys. Rev., 6, 021314 (2019). DOI: 10.1063/1.5088164
- G. Burkard, Th.D. Ladd, A. Pan, J.M. Nichol, J.R. Petta, Rev. Mod. Phys., 95, 025003 (2023). DOI: 10.1103/RevModPhys.95.025003
- J.R. Petta, A.C. Johnson, J.M. Taylor, E.A. Laird, A. Yacoby, M.D. Lukin, C.M. Marcus, M.P. Hanson, A.C. Gossard, Science, 309, 2180 (2005). DOI: 10.1126/science.1116955
- P. Stano, D. Loss, Nat. Rev. Phys., 4, 672 (2022). DOI: 10.1038/s42254-022-00484-w
- K. Fujii, H. Bettin, P. Becker, E. Massa, O. Rienitz, A. Pramann, A. Nicolaus, N. Kuramoto, I. Busch, M. Borys, Metrologia, 53, A19 (2016). DOI: 10.1088/0026-1394/53/5/A19
- A.M.J. Zwerver, T. Krahenmann, T.F. Watson, L. Lampert, H.C. George, R. Pillarisetty, S.A. Bojarski, P. Amin, S.V. Amitonov, J.M. Boter, R. Caudillo, D. Correas-Serrano, J.P. Dehollain, G. Droulers, E.M. Henry, R. Kotlyar, M. Lodari, F. Luthi, D.J. Michalak, B.K. Mueller, S. Neyens, J. Roberts, N. Samkharadze, G. Zheng, O.K. Zietz, G. Scappucci, M. Veldhorst, L.M.K. Vandersypen, J.S. Clarke, Nat. Electron., 5, 184 (2022). DOI: 10.1038/s41928-022-00727-9
- A. Noiri, K. Takeda, T. Nakajima, T. Kobayashi, A. Sammak, G. Scappucci, S. Tarucha, Nature, 601, 338 (2022). DOI: 10.1038/s41586-021-04182-y
- X. Xue, M. Russ, N. Samkharadze, B. Undseth, A. Sammak, G. Scappucci, L.M.K. Vandersypen, Nature, 601, 343 (2022). DOI: 10.1038/s41586-021-04273-w
- T. McJunkin, B. Harpt, Y. Feng, M.P. Losert, R. Rahman, J.P. Dodson, M.A. Wolfe, D.E. Savage, M.G. Lagally, S.N. Coppersmith, M. Friesen, R. Joynt, M.A. Eriksson, Nat. Commun., 13, 7777 (2022). DOI: 10.1038/s41467-022-35510-z
- M. Friesen, P. Rugheimer, D.E. Savage, M.G. Lagally, D.W. van der Weide, R. Joynt, M.A. Eriksson, Phys. Rev. B, 67, 121301(R) (2023). DOI: 10.1103/PhysRevB.67.121301
- https://www.mbe-komponenten.de/selection-guide/vapor-pressure.php
- V.V. Postnikov, A.V. Novikov, Sposob vyrashchivaniya kremniy-germanievykh geterostruktur, patent RF N 2407103 (20.12.2010). (in Russian) https://www.fips.ru/iiss/document.xhtml?faces-redirect=true\&id=6a0ddea4abe978a8af3a9f1472e560f5
- A. Hollmann, T. Struck, V. Langrock, A. Schmidbauer, F. Schauer, T. Leonhardt, K. Sawano, H. Riemann, N.V. Abrosimov, D. Bougeard, L.R. Schreiber, Phys. Rev. Appl., 13, 034068 (2020). DOI: 10.1103/PhysRevApplied.13.034068
- M.N. Drozdov, Yu.N. Drozdov, A.V. Novikov, P.A. Yunin, D.V. Yurasov, Semiconductors, 48, 1109 (2014). DOI: 10.1134/S1063782614080090.
Подсчитывается количество просмотров абстрактов ("html" на диаграммах) и полных версий статей ("pdf"). Просмотры с одинаковых IP-адресов засчитываются, если происходят с интервалом не менее 2-х часов.
Дата начала обработки статистических данных - 27 января 2016 г.