Properties of AlP/Si heterostructure fabricated by combination of plasma enhanced and atomic layer deposition
Gudovskikh A.S.1,2, Baranov A.I.1, Uvarov A.V.1, Vyacheslavova E.A.1, Maksimova A.A.1,2, Nikitina E.V.1, Soshnikov I.P.1,3,4
1Alferov Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg, Russia
2St. Petersburg State Electrotechnical University “LETI", St. Petersburg, Russia
3Ioffe Institute, St. Petersburg, Russia
4Institute for Analytical Instrumentation of the Russian Academy of Sciences, Saint Petersburg, Russia
Email: gudovskikh@spbau.ru
For the first time, AlP/Si heterostructures were formed using the method of combined plasma-enhanced and atomic layer deposition and studies of their electronic properties were carried out. Experimentally estimated conduction band offset Δ EC at the AlP/Si interface (0.35± 0.10 eV) is significantly less compared to that of the valence band offset. Thus AlP could be considered as an electron selective contact to Si for solar cells Keywords: aluminum phosphide, silicon, selective contact, solar cell.
- M.A. Green, E.D. Dunlop, G. Siefer, M. Yoshita, N. Kopidakis, K. Bothe, X. Hao, Prog. Photovolt. Res. Appl., 31, 3 (2023). DOI: 10.1002/pip.3646
- J. Bullock, M. Hettick, J. Geissbuhler, A.J. Ong, T. Allen, C.M. Sutter-Fella, T. Chen, H. Ota, E.W. Schaler, S. De Wolf, C. Ballif, A. Cuevas, A. Javey, Nat. Energy, 1, 15031 (2016). DOI: 10.1038/nenergy.2015.31
- I. Sakata, H. Kawanami, Appl. Phys. Express, 1, 091201 (2008). DOI: 10.1143/APEX.1.091201
- P. Perfetti, F. Patella, F. Sette, C. Quaresima, C. Capasso, A. Savoia, G. Margaritondo, Phys. Rev. B, 30, 4533 (1984). DOI: 10.1103/PhysRevB.30.4533
- A.D. Katnani, G. Margaritondo, Phys. Rev. B, 28, 1944 (1983). DOI: 10.1103/PhysRevB.28.1944
- H. Wagner, T. Ohrdes, A. Dastgheib-Shirazi, B. Puthen-Veettil, D. Konig, P.P. Altermatt, J. Appl. Phys., 115, 044508 (2014). DOI: 10.1063/1.4863464
- S. Yun, Ch.-H. Kuo, P.-Ch. Lee, S.T. Ueda, V. Wang, H. Kashyap, A.J. Mcleod, Z. Zhang, Ch.H. Winter, A.C. Kummel, Appl. Surf. Sci., 619, 156727 (2023). DOI: 10.1016/j.apsusc.2023.156727
- A.V. Uvarov, A.S. Gudovskikh, V.N. Nevedomskiy, A.I. Baranov, D.A. Kudryashov, I.A. Morozov, J.-P. Kleider, J. Phys. D: Appl. Phys., 53, 345105 (2020). DOI: 10.1088/1361-6463/ab8bfd
- N.E. Christensen, Phys. Rev. B, 37, 4528 (1988). DOI: 10.1103/PhysRevB.37.4528
- Y. Hu, C. Qiu, T. Shen, K. Yang, H. Deng, J. Semicond., 42, 112102 (2021). DOI: 10.1088/1674-4926/42/11/112102
- S. Nagao, T. Fujimori, H. Gotoh, H. Fukushima, T. Takano, H. Ito, S. Koshihara, F. Minami, J. Appl. Phys., 81, 1417 (1997). DOI: 10.1002/(SICI)1521-3951(199901)211:1<63::AID-PSSB63>3.0.CO;2-G
- A.S. Gudovskikh, A.V. Uvarov, I.A. Morozov, A.I. Baranov, D.A. Kudryashov, E.V. Nikitina, A.A. Bukatin, K.S. Zelentsov, I.S. Mukhin, A. Levtchenko, S. Le Gall, J.-P. Kleider, J. Renew. Sustain. Energy, 10, 021001 (2018). DOI: 10.1063/1.5000256
- S.R. Forrest, in: Heterojunction band discontinuities: physics and device applications (Elsevier, 1987), p. 311
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