Aksenov V. Yu
1, Ankudinov A. V.1, Vlasov A. S.1, Dunaevsky M. S.1, Jmerik V. N.1, Lebedev D. V.1, Likhachev K. V.1, Pereskokova V. A.1, Mintairov A. M.1
1Ioffe Institute, St. Petersburg, Russia
Email: axenov.v@gmail.com, alex_ank@mail.ru, vlasov@scell.ioffe.ru, mike.dunaeffsky@mail.ioffe.ru, jmerik@pls.ioffe.rssi.ru, lebedev_84@mail.ru, kirilll28.1998@gmail.com, pereskokova.valeria@mail.ru, amintairov@mail.ioffe.ru
Non-contact local doping of monolayer WSe2 transferred to piezoelectric epitaxial structures based on InP/GaInP2 and GaN, having surface potential variations with an amplitude of ~ 0.1 B and a size of ~ 0.2-1 μm is shown. Using scanning probe microscopy surface potential measurements, as well as optical reflectance, photoluminescence, and Raman spectroscopy measurements we observed variations in charged exciton (trion) emission/reflectance and Raman intensity due to variations in the surface potential of WSe2 monolayers, indicating local doping at n~1012 cm-2. Our results can be used to create Wigner quantum dots in transition metal dichalcogenides, which is promising for the development of fault-tolerant topological quantum computing at room temperature and without a magnetic field. Keywords: 2D semiconductors, local doping, optical spectroscopy, Kelvin probe, microscopy.
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