Influence of Bi impurity on the main parameters of the current-voltage characteristics of the Ge2Sb2Te5 phase-change memory semiconductor
Fefelov S. A. 1, Kazakova L. P.1,2, Bogoslovskiy N. A. 1, Bylev A. B. 2, Gushchina E. V. 1, Tolepov Zh. K. 3, Zhakypov A. S.3, Prikhodko O. Yu.3
1Ioffe Institute, St. Petersburg, Russia
2Kirov State Forest Technical University, St. Petersburg, Russia
3Al Farabi Kazakh National University, Almaty, Kazakhstan
Email: s.fefelov@list.ru
The current-voltage characteristics of thin-film samples of the Ge2Sb2Te5 phase-change memory material are measured in a current control mode. The influence of Bi impurity on the main parameters of the current-voltage characteristic is studied. The obtained results show an increase in the stability of the electrical properties of Ge2Sb2Te5 when doped with Bi at concentrations of 6.3 and 12.0 at%. The introduction of Bi impurity leads to the disappearance of voltage fluctuations after switching. Keywords: chalcogenide glassy semiconductors, Ge2Sb2Te5, phase-change memory, bismuth doping.
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