Study of the incorporation of group V atoms into arsenide-phosphide solid solutions grown by vapor-phase epitaxy using (CH3)3As as an arsenic source
Gavrilov K. A.
1, Mintairov S. A.1, Nadtochy A. M.1, Salii R. A.1, Kalyuzhnyy N. A.1
1Ioffe Institute, St. Petersburg, Russia
Email: gawrilowk@yandex.ru
In this paper, we consider the prospects of using trimethylarsine as an alternative source of arsenic atoms in metal-organic vapor-phase epitaxy of arsenide-phosphide solid solutions. Using InAsyP1-y as an example, we show that when using trimethylarsine, the arsenic concentration in the solid phase is less affected by fluctuations in the growth parameters (composition of the gas mixture) than when using a standard arsenic source - arsine. Keywords: MOVPE, trimethylarsine, TMAs, solid solutions, epitaxy.
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