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Characteristics of Josephson junctions obtained by the focused ion beam method in YBCO/CeO2/Al2O3 structures
Pestov E.E.1,2, Levichev M.Yu.1, Masterov D.V.
1, Pavlov S.A.1, Parafin A.E.
1, Petrov Y. V. 3
1Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, Russia
2Lobachevsky State University, Nizhny Novgorod, Russia
3St. Petersburg State University, St. Petersburg, Russia
2Lobachevsky State University, Nizhny Novgorod, Russia
3St. Petersburg State University, St. Petersburg, Russia
Email: masterov@ipmras.ru, parafin@ipmras.ru
HTS Josephson junctions were made on a sapphire substrate with a sublayer of epitaxial cerium oxide using a focused beam of helium ions. The transport and microwave properties of junctions obtained at different radiation doses of YBa2Cu3O7-d bridges have been studied. When exposed to the studied Josephson junctions of radiation with a frequency of about 79 GHz, Shapiro steps are observed on their current-voltage characteristics. Keywords: substrates with a sublayer of epitaxial cerium oxide, YBCO films, Josephson junctions, focused ion beam.
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