Stimulated emission in the InAs/InAsSb/InAsSbP heterostructures with asymmetric electronic confinement
Semakova A. A.
1, Ruzhevich M. S.
2, Romanov V. V.
1, Bazhenov N. L.
1, Mynbaev K. D.
1,2, Moiseev K. D.
11Ioffe Institute, St. Petersburg, Russia
2ITMO University, St. Petersburg, Russia
Email: antonina.semakova@mail.ioffe.ru
The electroluminescent characteristics of the InAs/InAs1-ySby/InAsSbP asymmetric light-emitting diode heterostructures with high InSb mole fraction in the active region (y>0.09) in the temperature range 4.2-300 K have been studied. Stimulated emission was achieved in the wavelength range 4.1-4.2 μm at low temperatures (T<30 K). It was found that the electroluminescence spectra were formed as a result of the superposition of contributions from different channels of radiative recombination of charge carriers near the type II heterointerface. The effect of the quality of the type II InAsSb/InAsSbP heterojunction on the radiative interface transitions with an increase in the content of InSb in the ternary solid solution is considered. Keywords: heterojunctions, InAs, antimonides, electroluminescence, light-emitting diodes.
- S. Adachi. Properties of Semiconductor Alloys: Group-IV, III-V, and II-VI Semiconductors (John Wiley \& Sons, Ltd., Chichester West Sussex, 2009)
- A. Rogalski, P. Martyniuk, M. Kopytko, P. Madejczyk, S. Krishna. Sensors, 20, 7047 (2020)
- A.P. Ongstad, R. Kaspi, G.C. Dente, M.L. Tilton, R. Barresi, J.R. Chavez. Appl. Phys. Lett., 92, 141106 (2008)
- D. Ting, A. Soibel, A. Khoshakhlagh, S. Keo, B. Rafol, A. Fisher, B. Pepper, E. Luong, C. Hill, S. Guhapala. Infr. Phys. Technol., 97, 210 (2019)
- D. Jung, S. Bank, M.L. Lee, D. Wasserman. J. Opt., 19, 123001 (2017)
- Q. Lu, Y. Zhou, J. Chen, L. He, A. Krier. Proc. SPIE, Smart Photonic and Optoelectronic Integrated Circuits XXII, 11284, 39 (2020)
- F.A. Al-Saymari, A.P. Craig, Q. Lu, A.R.J. Marshall, P.J. Carrington, A. Krier. Opt. Express, 28, 23338 (2020)
- D.M. Kabanau, Y.V. Lebiadok, Yu.P. Yakovlev. J. Appl. Spectrosc., 84, 843 (2017)
- K.D. Mynbaev, N.L. Bazhenov, A.A. Semakova, A.V. Chernyaev, S.S. Kizhaev, N.D. Stoyanov, V.E. Bougrov, H. Lipsanen, Kh.M. Salikhov. Inf. Phys. Technol., 85,246 (2017)
- K.D. Moiseev, V.V. Romanov. Phys. Solid State, 63, 595 (2021)
- A.A. Semakova, V.V. Romanov, N.L. Bazhenov, K.D. Mynbaev, K.D. Moiseev. Semiconductors, 55, 354 (2021)
- V.V. Romanov, E.V. Ivanov, K.D. Moiseev. Phys. Solid State, 61, 1699 (2019)
- V.V. Romanov, E.V. Ivanov, A.A. Pivovarova, K.D. Moiseev, Yu.P. Yakovlev. Semiconductors, 54, 253 (2020)
- Y.P. Varshni. Physica, 4, 149 (1967)
- J.A. Van Vechten, T.K. Bergstresser. Phys. Rev. B, 1, 3351 (1970)
- Landolt-Bornstein. Handbook, Numerical Data, Ser. III, v. 17a [ed. by O. Madelung (Springer, Berlin--Heidelberg, 1982)]
- V.V. Romanov, E.V. Ivanov, K.D. Moiseev. Phys. Solid State, 62, 2039 (2020)
- K.D. Moiseev, M.P. Mikhailova, Yu.P. Yakovlev. Semiconductors, 37, 985 (2003)
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