Radiation Damage Accumulation in α-Ga2O3 under P and PF4 Ion Bombardment
Karaseov P. A. 1, Karabeshkin K. V. 1, Struchkov A. I. 1, Pechnikov A. I. 2, Nikolaev V. I. 2, Andreeva V. D. 1, Titov A. I. 1
1Peter the Great Saint-Petersburg Polytechnic University, St. Petersburg, Russia
2Ioffe Institute, St. Petersburg, Russia
Email: Platon.Karaseov@spbstu.ru, yanikolaus@yandex.ru, andrei.struchckov@yandex.ru, nkvlad@inbox.ru, Andrei.Titov@rphf.spbstu.ru

PDF
We study radiation damage accumulation in alpha polymorph of gallium oxide (α-Ga2O3) epitaxial layers under irradiation with 40 keV monatomic P and 140 keV molecular PF4 ions. The distribution of stable structural damage is bimodal in both cases. The growth rate of the surface disordered layer under PF4 ion irradiation is significantly higher than that under monatomic P ion bombardment. At the same time, monatomic ion irradiation is more efficient in the bulk defect peak formation. Thus, the density of displacement cascades strongly affects the formation of stable damage in α-gallium oxide. The doses required to create the same level of disorder in the metastable α-polymorph are higher than that in the thermodynamically stable α-. Mechanisms of damage formation in these polymorphs are different. Keywords: gallium oxide, α-Ga2O3, ion bombardment, collision cascades, radiation damage, collision cascade density, defect engineering, radiation resistance.
  1. P.J. Wellmann, Z. Anorg. Allg. Chem., 643, 1312 (2017). Doi: 10.1002/zaac.201700270
  2. S.I. Stepanov, V.I. Nikolaev, V.E. Bougrov, A.E. Romanov. Rev. Adv. Mater. Sci., 44, 63 (2016)
  3. S.J. Pearton, F. Ren, M. Mastro (eds). Gallium Oxide. Technology, Devices and Applications (Elsevier Inc., 2019)
  4. S.J. Pearton, F. Ren, M. Tadjer, J. Kim. J. Appl. Phys., 124, 220901 (2018). Doi: 10.1063/1.5062841
  5. A. Nikolskaya, E. Okulich, D. Korolev, A. Stepanov, D. Nicolichev, A. Mikhaylov, D. Tetelbaum, A. Almaev, Ch.A. Bolzan, A. Buaczik, jr., R. Giulian, P.L. Grande, A. Kumar, M. Kumar, D. Gogova. J. Vac. Sci. Technol., 39, 030802 (2021). Doi: 10.1116/6.0000928
  6. E. Ahmadi, Y. Oshima. J. Appl. Phys., 126, 160901 (2019). Doi: 10.1063/1.5123213
  7. A.Y. Polyakov, V.I. Nikolaev, E.B. Yakimov, F. Ren, S.J. Pearton, J. Kim. J. Vac. Sci. Tech. A, 40, 020804 (2022). Doi: 10.1116/6.0001701
  8. W. Wesch, E. Wendler. Ion Beam Modification of Solids: Ion-Solid Interaction and Radiation Damage (eds) (Springer Cham, 2016). Doi: 10.1007/978-3-319-33561-2
  9. A.I. Titov, A.Yu. Azarov, L.M. Nikulina, S.O. Kucheyev. Phys. Rev. B, 73, 064111 (2006). Doi: 10.1103/PhysRevB.73.064111
  10. A.I. Titov, S.O. Kucheyev, V.S. Belyakov, A.Yu. Azarov. J. Appl. Phys., 90, 3867 (2001). Doi: 10.1063/1.1404426
  11. J.B. Wallace, L.B. Bayu Aji, L. Shao, S.O. Kucheyev. Phys. Rev. Lett., 120, 216101 (2018). Doi: 10.1103/PhysRevLett.120.216101
  12. L.B. Bayu Aji, J.B. Wallace, S.O. Kucheyev. Sci. Rep., 7, 4703 (2017). Doi: 10.1038/srep44703
  13. A.Yu. Azarov, S.O. Kucheyev, A.I. Titov, P.A. Karaseov. J. Appl. Phys., 102, 083547 (2007). Doi: 10.1063/1.2801404
  14. A.I. Titov, P.A. Karaseov, V.S. Belyakov, K.V. Karabeshkin, A.V. Arkhipov, S.O. Kucheyev, A. Azarov. Vacuum, 86, 1638 (2012). Doi: 10.1016/j.vacuum.2011.12.014
  15. P.A. Karaseov, K.V. Karabeshkin, E.E. Mongo, A.I. Titov, M.W. Ullah, A. Kuronen, F. Djurabekova, K. Nordlund. Vacuum, 129, 166 (2016). Doi: 10.1016/j.vacuum.2016.01.011
  16. A. De Backer, A.E. Sand, K. Nordlund, L. Luneville, D. Simeone, S.L. Dudarev. EuroPhys. Lett., 115, 26001 (2016). Doi: 10.1209/0295-5075/115/26001
  17. A. Delcorte, P. Bertrand, B.J. Garrison. J. Phys. Chem. B, 105, 9474 (2001). Doi: 10.1021/jp011099e
  18. K.V. Karabeshkin, A.I. Struchkov, A.I. Titov, A. Azarov, D. Gogova, P. Karaseov. Springer Proceedings in Physics, 268, 255 (2022). Doi: 10.1007/978-3-030-81119-8_27
  19. A.I. Titov, V.S. Belyakov, S.O. Kucheyev. Nucl. Instr. Meth. Phys. Res. B, 194, 323 (2002). Doi: 10.1016/S0168-583X(02)00784-X
  20. A.I. Titov, K.V. Karabeshkin, A.I. Struchkov, V.I. Nicolaev, A.E. Azarov, D.S. Gogova, P.A. Karaseov. Vacuum, 200, 111005 (2022). Doi: 10.1016/j.vacuum.2022.111005
  21. A.I. Pechnikov, S.I. Stepanov, A.V. Chikiryaka, M.P. Sheglov, M.A. Odnobludov, V.I. Nicolaev. Semiconductors, 53, 780 (2019). Doi: 10.1134/S1063782619060150)
  22. A.Yu. Azarov, A.I. Titov. Semiconductors, 41, 7 (2007). Doi: 10.1134/S1063782607010022)
  23. P.A. Karaseov, A.Yu. Azarov, A.I. Titov, S.O. Kucheyev. Semiconductors, 43, 691 (2009). Doi: 10.1134/S1063782609060013)
  24. J.F. Ziegler, J.P. Biersack, U. Littmark. The Stopping and Range of Ions in Solids (Pergamon Press, N. Y., 1985). SRIM-2013 software package available at http://www.srim.org Doi: 10.1007/978-1-4615-8103-1_3
  25. E. Wendler, E. Treiber, J. Baldauf, S. Wolf, C. Ronnig. Nucl. Instr. Meth. Phys. Res. B, 379, 85 (2016). Doi: 10.1016/j.nimb.2016.03.044
  26. S.B. Kjeldby, A. Azarov, P.D. Nguyen, V. Venkatachalapathy, R. Miksova, A. Mackova, A. Kuznetsov, O. Prutz, L. Vines. J. Appl. Phys., 131, 125701 (2022). Doi: 10.1063/5.0083858
  27. K. Schmid. Radiat. Eff., 17, 201 (1973). Doi: 10.1080/00337577308232616
  28. J.A. Brinkman. J. Appl. Phys., 25, 961 (1954). Doi: 10.1063/1.1721810
  29. D.A. Thompson. Radiat. Eff., 56, 105 (1981). Doi: 10.1080/00337578108229885
  30. J.A. Davies. High Energy Density Collision Cascades and Spike Effects, p.81, in Ion Implantation and Beam Processing, ed. by J.S. Williams, J.M. Poate (Sydney, Academic Press, 1984). Doi: 10.1016/B978-0-12-756980-2.50008-4
  31. S.O. Kucheyev, A.Yu. Azarov, A.I. Titov, P.A. Karaseov, T.M. Kuchumova. J. Phys. D: Appl. Phys., 42, 085309 (2009). Doi: 10.1088/0022-3727/42/8/085309
  32. M.W. Ullah, A. Kuronen, K. Nordlund, F. Djurabekova, P.A. Karaseov. J. Appl. Phys., 112, 043517 (2012). Doi: 10.1063/1.4747917
  33. A.I. Titov, V.S. Belyakov, A.Yu. Azarov. Nucl. Instr. Meth. Phys. Res. B, 212, 169 (2003). Doi: 10.1016/S0168-583X(03)01486-1

Подсчитывается количество просмотров абстрактов ("html" на диаграммах) и полных версий статей ("pdf"). Просмотры с одинаковых IP-адресов засчитываются, если происходят с интервалом не менее 2-х часов.

Дата начала обработки статистических данных - 27 января 2016 г.

Publisher:

Ioffe Institute

Institute Officers:

Director: Sergei V. Ivanov

Contact us:

26 Polytekhnicheskaya, Saint Petersburg 194021, Russian Federation
Fax: +7 (812) 297 1017
Phone: +7 (812) 297 2245
E-mail: post@mail.ioffe.ru