High-efficiency GaInP/GaAs photoconverters of the 600 nm laser line
Mintairov S. A. 1, Malevskaya A. V. 1, Mintairov M. A. 1, Nakhimovich M. V.1, Salii R. A. 1, Shvarts M. Z. 1, Kalyuzhnyy N. A.1
1Ioffe Institute, St. Petersburg, Russia
Email: mintairov@scell.ioffe.ru

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Optimized photoconverters for operation under high-power laser radiation in the green-red spectral range based on MOCVD-grown GaInP/GaAs heterostructures are fabricated. The Au(Ge)/Ni/Au and Pd/Ge/Au contact systems have been studied to form the front contact grid of devices. As a result, the laser photoconverter with a Pd/Ge/Au contact showed an efficiency of more than 50% up to an incident radiation power density of 30 W/cm2 with a maximum value of 54.4% under 7 W/cm2 for laser line with wavelength of 600 nm. Keywords: photoconverter, laser radiation, MOCVD, efficiency, spectral sensitivity.
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