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Change of the loop directions on the high-frequency capacitance-voltage characteristics at a critical bias voltage, dielectric properties and memory effects in the Sr_0.6Ba_0.4Nb₂O₆/SrTiO₃/Si(001) heterostructure

Russian version

Pavlenko A. V.

¹Federal Research Center Southern Scientific Center of the Russian Academy of Sciences, Rostov-on-Don, Russia

Email: Antvpr@mail.ru

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Abstract
References
Статистика просмотров

A c-oriented barium-strontium niobate film of composition Sr_0.6Ba_0.4Nb₂O₆ (SBN60) with a thickness of 600 nm was grown by high-frequency cathode sputtering on a Si(001) substrate with a preliminarily deposited SrTiO₃ (STO) sublayer. It is shown that the film belongs to the relaxor ferroelectrics. When analyzing the high-frequency capacitance-voltage characteristics of the SBN60/STO/Si(001) heterostructure at U=0-24 V, a critical electric voltage (~ 10 V) was established, in the vicinity of which a change in the C(U) loop direction was observed. It is shown that the reason of loop direction change may be due to an increase in the role of the built-in charge, which is formed at the film-substrate interface, as the amplitude U increases, simultaneously with ferroelectric polarization switching in the SBN60 film. The causes of the revealed regularities and their role in the study of memory effects in the SBN60/STO/Si(001) heterostructure are discussed. Keywords: barium-strontium niobate (SBN), metal-ferroelectric-semiconductor structures, thin films.

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