Silicon differential photodetectors. Technology, characteristics, application
V.V. Gavrushko1, A.S. Ionov1, O.R. Kadriev1, V.A. Lastkin1
1Yaroslav-the-Wise Novgorod State University, Veliky Novgorod, Russia
Email: Valery.Gavrushko@novsu.ru

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A silicon-based photodetector containing two identical n^+-p-photodiodes is described. One of the photodiodes had a wide spectral response with high sensitivity in the ultraviolet region. The sensitivity of the second was reduced in the short-wavelength part of the spectrum by creating additional recombination centers in the near-surface region by implanting As ions. The spectral sensitivity of the differential signal obtained by subtracting photocurrents had a pronounced short-wavelength characteristic. The long-wavelength limit of the spectral range in terms of the λ0.5 level, depending on the doping dose, was in the range of 0.37-0.47 μm. The sensitivity maximum corresponded to λmax=0.32-0.37 μm. The electrical and noise characteristics of the photodetector are given. The possibility of using differential photodetectors as two-color ones is shown. Keywords: Photodiode, implantation, differential signal, ultraviolet, two-spectrum photodetector.
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