Development of technology for plasma-enhanced chemical vapor deposition of boron phosphide at low temperatures
Maksimova A. A.1,2, Uvarov A. V.1,2, Vyacheslavova E. A.1,2, Baranov A. I.1,2, Gudovskikh A. S.1,2
1Alferov Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg, Russia
2St. Petersburg State Electrotechnical University “LETI", St. Petersburg, Russia
Email: maksimova_alina@spbau.ru
In this work, boron phosphide was deposited on silicon substrates using plasma-chemical deposition at a low temperature (350oC) for the first time. The following precursors were used: a gas mixture of diborane (B2H6/H2) and pure phosphine (PH3). The Raman spectra of the original samples showed broadened peaks at 450 cm-1 and ~700 cm-1 corresponding to amorphous boron phosphide. Annealing of the samples affected the structure of the layers and led to partial crystallization; a peak of crystalline boron phosphide was detected at 823 cm-1. Keywords: boron phosphide, PECVD, scanning electron microscopy, Raman spectroscopy.
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