Physics of the Solid State
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Impedance measurement at intermediate frequency for an SIS mixer in the 1.1-1.4 mm range
Vodzyanovsky Ya. O. 1,2,3, Rudakov K. I. 1,2, Tretyakov I. V. 1, Filippenko L. V. 2, Koshelets V. P. 2,3, Kuznetsov S. A. 4,5, Arkhipov M. Yu. 1, Khudchenko A. V. 1
1Astro Space Center of P.N. Lebedev Physical Institute of the Russian Academy of Sciences, Moscow, Russia
2Kotelnikov Institute of Radio Engineering and Electronics, Russian Academy of Sciences, Moscow, Russia
3Moscow Institute of Physics and Technology (National Research University), Dolgoprudny, Moscow Region, Russia
4Rzhanov Institute of Semiconductor Physics SB RAS, Novosibirsk Branch “TDIAM”, Novosibirsk, Russia
5Novosibirsk State University, Novosibirsk, Russia
Email: ya.vodzyanovskiy@lebedev.ru

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The work carried out an experimental measurement and numerical calculation of the impedance along the IF path for a superconductor-insulator-superconductor tunnel junction in a two-way mixer in the range of 1.1-1.4 mm. It has been shown that the power reflectance can vary from -30 to -5 dB depending on the operating point. An experimental method for determining the impedance of an SIS mixer has been proposed and tested Keywords:: superconductor-insulator-superconductor tunnel junction, intermediate frequency, submillimeter SIS mixer.
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